scholarly journals Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

2014 ◽  
Vol 5 ◽  
pp. 964-972 ◽  
Author(s):  
Tomi Roinila ◽  
Xiao Yu ◽  
Jarmo Verho ◽  
Tie Li ◽  
Pasi Kallio ◽  
...  
Keyword(s):  
Frequency Domain ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Binary Sequence ◽  
Practical Applications ◽  
Frequency Domain Methods ◽  
Wide Range

Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is seen in the voltage–current behavior between the drain and source. Some current, known as leakage current, flows between the gate and drain, and affects the current between the drain and source. Studies have shown that leakage current is frequency dependent. Measurements of such frequency characteristics can provide valuable tools in validating the functionality of the used transistor. The measurements can also be an advantage in developing new detection technologies utilizing SiNW FETs. The frequency-domain responses can be measured by using a commercial sine-sweep-based network analyzer. However, because the analyzer takes a long time, it effectively prevents the development of most practical applications. Another problem with the method is that in order to produce sinusoids the signal generator has to cope with a large number of signal levels. This may become challenging in developing low-cost applications. This paper presents fast, cost-effective frequency-domain methods with which to obtain the responses within seconds. The inverse-repeat binary sequence (IRS) is applied and the admittance spectroscopy between the drain and source is computed through Fourier methods. The methods is verified by experimental measurements from an n-type SiNW FET.

Vertical surround-gated silicon nanowire impact ionization field-effect transistors

2007 ◽  
Vol 90 (14) ◽  
pp. 142110 ◽  
Author(s):  
M. T. Björk ◽  
O. Hayden ◽  
H. Schmid ◽  
H. Riel ◽  
W. Riess
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors

2021 ◽  
Author(s):  
Yejin Yang ◽  
Juhee Jeon ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Processing Speed ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Logic Gate ◽  
High Energy ◽  
Zero Bias ◽  
Computing Systems ◽  
Data Movement

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.

scholarly journals Utilization of Food Processing By-products in Extrusion Processing: A Review

2021 ◽  
Vol 4 ◽  
Author(s):  
Debomitra Dey ◽  
Jana K. Richter ◽  
Pichmony Ek ◽  
Bon-Jae Gu ◽  
Girish M. Ganjyal
Keyword(s):  
Functional Properties ◽  
Low Cost ◽  
Value Added ◽  
Raw Material ◽  
Practical Applications ◽  
Extrusion Processing ◽  
High Production Rate ◽  
Wide Range ◽  
Extruded Products ◽  
By Products

The processing of agricultural products into value-added food products yields numerous by-products or waste streams such as pomace (fruit and vegetable processing), hull/bran (grain milling), meal/cake (oil extraction), bagasse (sugar processing), brewer's spent grain (brewing), cottonseed meal (cotton processing), among others. In the past, significant work in exploring the possibility of the utilization of these by-products has been performed. Most by-products are highly nutritious and can be excellent low-cost sources of dietary fiber, proteins, and bioactive compounds such as polyphenols, antioxidants, and vitamins. The amount of energy utilized for the disposal of these materials is far less than the energy required for the purification of these materials for valorization. Thus, in many cases, these materials go to waste or landfill. Studies have been conducted to incorporate the by-products into different foods in order to promote their utilization and tackle their environmental impacts. Extrusion processing can be an excellent avenue for the utilization of these by-products in foods. Extrusion is a widely used thermo-mechanical process due to its versatility, flexibility, high production rate, low cost, and energy efficiency. Extruded products such as direct-expanded products, breakfast cereals, and pasta have been developed by researchers using agricultural by-products. The different by-products have a wide range of characteristics in terms of chemical composition and functional properties, affecting the final products in extrusion processing. For the practical applications of these by-products in extrusion, it is crucial to understand their impacts on the qualities of raw material blends and extruded products. This review summarizes the general differences in the properties of food by-products from different sources (proximate compositions, physicochemical properties, and functional properties) and how these properties and the extrusion processing conditions influence the product characteristics. The discussion of the by-product properties and their impacts on the extrudates and their nutritional profile can be useful for food manufacturers and researchers to expand their applications. The gaps in the literature have been highlighted for further research and better utilization of by-products with extrusion processing.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

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