Automated design system for gate array-based CMOS integrated circuits

2012 ◽  
Author(s):  
Rumen Yordanov ◽  
Irena Yordanova ◽  
Juriy Ivanov
Keyword(s):  
Integrated Circuits ◽  
Automated Design ◽  
Cmos Integrated Circuits ◽  
Design System ◽  
Gate Array

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

High-temperature leakage current suppression in CMOS integrated circuits

1989 ◽  
Vol 25 (17) ◽  
pp. 1133 ◽  
Author(s):  
S.E. Nordquist ◽  
J.W. Haslett ◽  
F.N. Trofimenkoff
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Leakage Current ◽  
Cmos Integrated Circuits

Automated Design System

1972 ◽  
Author(s):  
A. J. Foland ◽  
R. Razi
Keyword(s):  
Automated Design ◽  
Design System

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

Sign in / Sign up

Export Citation Format

Share Document