The purpose is to make defect detection in microelectronic processing technology fast, accurate, reliable, and efficient. A new optical remote sensing-optical beam induced resistance change (ORS-OBIRCH) target recognition and location defect detection method is proposed based on an artificial intelligence algorithm, optical remote sensing (ORS), and optical beam induced resistance change (OBIRCH) location technology using deep convolutional neural network. This method integrates the characteristics of high resolution and rich details of the image obtained by ORS technology and combines the advantages of photosensitive temperature characteristics in OBIRCH positioning technology. It can be adopted to identify, capture, and locate the defects of microdevices in the process of microelectronic processing. Simulation results show that this method can quickly reduce the detection range and locate defects accurately and efficiently. The experimental results reveal that the ORS-OBIRCH target recognition defect location detection method can complete the dynamic synchronization of the IC detection system and obtain high-quality images by changing the laser beam irradiation cycle. Moreover, it can analyze and process the detection results to quickly, accurately, and efficiently locate the defect location. Unlike the traditional detection methods, the success rate of detection has been greatly improved, which is about 95.8%, an increase of nearly 40%; the detection time has been reduced by more than half, from 5.5 days to 1.9 days, and the improvement rate has reached more than 65%. In a word, this method has good practical application value in the field of microelectronic processing.
The Use of Artificial Intelligence-Based Optical Remote Sensing and Positioning Technology in Microelectronic Processing Technology