Using Electrical Fault Isolation and Characterization to Improve the Effectiveness of Physical Fault Isolation Techniques for Analog Circuits

2017 ◽  
Author(s):  
Jim Douglass ◽  
Sohrab Pourmand
Keyword(s):  
Induced Resistance ◽  
Analog Circuits ◽  
Fault Isolation ◽  
Optical Beam ◽  
Resistance Change ◽  
Isolation Techniques ◽  
Isolation And Characterization ◽  
Lock In

Abstract This paper shows that by combining electrical fault isolation and characterization by microprobing with physical fault isolation techniques both what is wrong with the circuit and where the defect is located can be determined with less microprobing and more safety from electrical recovery. In the first example, the unit was powered up using the optical beam induced resistance change (OBIRCH) supply, and OBIRCH was performed to determine if there were OBIRCH site differences between the good part and the return. The second example uses a combination of electrical fault isolation and characterization with microprobing and the physical fault isolation tool of lock in thermography (LIT). With these two examples, it has been shown that the use of electrical fault isolation and microprobing can be used to enhance the physical fault isolation tools of OBIRCH and LIT.

High Resolution Localization Using Lock-in Based Electron Beam Methods

2017 ◽  
Author(s):  
Felix Rolf ◽  
Christian Hollerith ◽  
Christian Feuerbaum
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Induced Resistance ◽  
High Efficiency ◽  
Optical Beam ◽  
Resistance Change ◽  
Root Cause ◽  
Special Challenge ◽  
Electron Beam Induced Current ◽  
Lock In

Abstract With decreasing transistor sizes accurate failure localization becomes more and more important in order to find the root cause of failures with high efficiency. Field returns are a special challenge, since there is usually only one sample for preparation. Hence, reliable high resolution localization is mandatory for a successful preparation. Optical beam induced resistance change (OBIRCH) is a powerful tool for localization but has resolution limitations due to the diameter of the optical beam. The tool can be further improved by the lock-in technique. In this paper we demonstrate that the lock-in technique can also be applied for electron beam localization methods like electron beam induced current (EBIC) / electron beam absorbed current (EBAC) and resistance change imaging (RCI) / electron beam induced resistance change (EBIRCH).

3DIC Fault Isolation Using the OBIRCH Approach

2011 ◽  
Author(s):  
Ming-Sung Hsu ◽  
Yian-Liang Kuo ◽  
Yu-Ting Lin ◽  
Ru-Ying Huang ◽  
Min-Feng Ku ◽  
...  
Keyword(s):  
Induced Resistance ◽  
Fault Isolation ◽  
Optical Beam ◽  
Resistance Change ◽  
Non Destructive

Abstract This paper uses an interesting specific case study to highlight the non-destructive fault isolation demonstration of 3DIC stacked dies applied the optical beam induced resistance change (OBIRCH) approach.

Laser Failure Isolation Techniques Demonstrated On Test Structures

2008 ◽  
Author(s):  
Frank S. Arnold
Keyword(s):  
Integrated Circuits ◽  
Laser Beam ◽  
Case Studies ◽  
Induced Resistance ◽  
Simple Test ◽  
Resistance Change ◽  
Cross Sectional ◽  
Beam Focusing ◽  
Isolation Techniques ◽  
Heating Effects

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

2008 ◽  
Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu
Keyword(s):  
Semiconductor Device ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Isolation Technique ◽  
Isolation Techniques ◽  
Atomic Force ◽  
Analysis Experiment ◽  
Failure Point ◽  
Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

Investigating carrier transport paths in organic nonvolatile bistable memory by optical beam induced resistance change

2011 ◽  
Vol 12 (10) ◽  
pp. 1632-1637 ◽  
Author(s):  
Heng-Tien Lin ◽  
Chang-Yu Lin ◽  
Zingway Pei ◽  
Jun-Rong Chen ◽  
Yi-Jen Chan ◽  
...  
Keyword(s):  
Induced Resistance ◽  
Carrier Transport ◽  
Optical Beam ◽  
Resistance Change

High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100 nm2 Localization

2015 ◽  
Author(s):  
Brett A. Buchea ◽  
Christopher S. Butler ◽  
H.J. Ryu ◽  
Wen-hsien Chuang ◽  
Martin von Haartman ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Induced Resistance ◽  
Fault Isolation ◽  
Direct Stimulation ◽  
Resistance Change ◽  
Isolation Technique ◽  
High Resolution Imagery ◽  
Defect Isolation ◽  
Time Required

Abstract A novel fault isolation technique, electron beam induced resistance change (EBIRCh), allows for the direct stimulation and localization of eBeam current sensitive defects with resolution of approximately 100nm square, continuing a history of beam based failure isolation methods. EBIRCh has been shown to work over a range of defects, significantly decreasing the time required for isolation of shorts through straightforward high resolution imagery, allowing for explicit visual defect isolation with a linear resolution of approximately 10nm. This paper discusses the operational setups for the source and amplifier while performing an EBIRCh scan, describes the processes involved in the Intel test vehicle that was used to test EBIRCh, and provides information on two independent functional theories for EBIRCh that operate in conjunction to a greater or lesser extent depending on the defect type. EBIRCh is expected to improve through-put and resolution on various defect types compared to conventional fault isolation techniques.

Combining Electron Beam Methods, EBIC and EBAC, with Traditional Approaches for Highly Effective Fault Isolation

2017 ◽  
Author(s):  
Ryan Fredrickson ◽  
Tim Kuebrich ◽  
Andrew Le ◽  
Derek Snider ◽  
Lucas Winiarski
Keyword(s):  
Electron Beam ◽  
Liquid Crystal ◽  
Local Heating ◽  
Interesting Case ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Defect Site ◽  
Isolation Techniques ◽  
Defect Sites

Abstract Fault isolation is an important initial component of the failure analysis investigation as it provides the first indicator of the defect physical location. The most broadly familiar fault isolation techniques include photoemission microscopy (PEM), optical beam induced resistance change (OBIRCH) and liquid crystal analysis (LCA). Each of these techniques has their own strengths but also drawbacks which can impede the analysis by either not providing a well isolated defect location or causing damage to the defect region. For some types of defects, photoemission and liquid crystal analysis may create local heating of the device which can distort the defect and mask the root cause of the failure. These techniques also rely on optical microscopy which has low resolution compared to the feature size of current technologies. In addition, each technique may not highlight the defect site itself; only pointing the analyst to the defective circuit within the sample. Electron Beam Induced Current (EBIC) and Electron Beam Absorbed Current (EBAC) microscopy provides solutions to these complications. In this paper we describe some very effective approaches by using these beam-based techniques in conjunction with traditional methods. As introduction, we have provided some interesting case studies whereby EBIC/EBAC have been used in conjunction with FIB circuit edits and scan diagnostic results to narrow the defect search areas. We focus the paper on some less common applications of cross sectional EBIC/EBAC as well as utilizing an AC coupled configuration to activate more subtle defect sites. We conclude with two examples where AC coupled cross-sectional EBIC is needed to highlight the cause of the failure.

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