Research on high voltage shore power supply based on DC bias suppression strategy

Author(s):  
Yue Yu ◽  
Qiliang Zhao ◽  
Yuzhen Liu ◽  
Baichao Wang ◽  
Mingran Zhang ◽  
...  
2015 ◽  
Vol 9 (1) ◽  
pp. 253-262
Author(s):  
Liu Zhongfu ◽  
Zhang Junxing ◽  
Shi Lixin ◽  
Yang Yaning

As for the wide application of arc suppression coil to the grounding in neutral point of mine high voltage grid, grid leakage fault rules and harmonic characteristics of the neutral point grounding system through arc suppression coil are analyzed, the selective leakage protection program “zero-sequence voltage starts, fifth harmonics of grid zerosequence voltage and zero-sequence current are extracted for phase comparison” is proposed, and corresponding fifth harmonic extraction circuit and power direction discrimination circuit are designed. The experimental results show that the protective principle applies not only to the neutral point insulated power supply system, but also to the power supply system in which neutral point passes arc suppression coil, which can solve selective leakage protection problems under different neutral grounding ways, improving the reliability of selective leakage and guaranteeing the stability of the action value.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


2007 ◽  
Vol 14 (4) ◽  
pp. 921-926 ◽  
Author(s):  
Jong-Hyun Kim ◽  
Byung-Duk Min ◽  
Sergey Shenderey ◽  
Geun-Hie Rim

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