Fabrication of patterned diamond field emitter tips using silicon oxide barrier

Arrays of nanometer-scale field emitters have recently become attractive candidates for device applications where high frequency and high current are desirable attributes. High emission current can be obtained from densely packed Spindt-type emitter arrays with very low extraction voltage. Concern with the optimum geometrical shape of each emitter and the fraction of active emitters, makes a combined study of field emission and scanning electron microscopy especially useful.Several geometrical structures, as well as several materials, have been used to fabricate the field emitter arrays. The present study concentrates on silicon-base emitters fabricated at the Microelectronics Center of North Carolina (MCNC). Each emitter has a pyramidal structure, fabricated by anisotropic chemical etching of highly doped (ND = 1017 cm−3) n-type silicon. Figure 1 shows a SEM micrograph of a typical Si field emitter with a radius of curvature less than 30 nm. The field required for electron emission, about 3 × 107 V/cm, is created by a relatively low voltage applied to the extraction gate, a metal film less than one micron distant and deposited over a dielectric layer of silicon oxide (Figures 2 and 3).

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Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/46/8/084013 ◽

2013 ◽

Vol 46 (8) ◽

pp. 084013 ◽

Cited By ~ 18

Author(s):

S Steves ◽

B Ozkaya ◽

C-N Liu ◽

O Ozcan ◽

N Bibinov ◽

...

Keyword(s):

Silicon Oxide ◽

Deposition Process ◽

Substrate Bias ◽

Film Properties ◽

Pulsed Plasmas ◽

Barrier Films ◽

Oxide Barrier ◽

Influence Of Substrate ◽

Pet Foils

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Plasma-deposited silicon oxide barrier films on polyethersulfone substrates: temperature and thickness effects

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2004.09.033 ◽

2005 ◽

Vol 197 (2-3) ◽

pp. 253-259 ◽

Cited By ~ 48

Author(s):

D.S. Wuu ◽

W.C. Lo ◽

C.C. Chiang ◽

H.B. Lin ◽

L.S. Chang ◽

...

Keyword(s):

Silicon Oxide ◽

Barrier Films ◽

Oxide Barrier

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Adhesion of plasma-deposited silicon oxide barrier layers on PDMS containing polypropylene

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2017.12.015 ◽

2018 ◽

Vol 335 ◽

pp. 25-31 ◽

Cited By ~ 8

Author(s):

C. Hoppe ◽

F. Mitschker ◽

P. Awakowicz ◽

D. Kirchheim ◽

R. Dahlmann ◽

...

Keyword(s):

Silicon Oxide ◽

Barrier Layers ◽

Oxide Barrier

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Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer

IEEE Electron Device Letters ◽

10.1109/led.2012.2191530 ◽

2012 ◽

Vol 33 (6) ◽

pp. 836-838 ◽

Cited By ~ 14

Author(s):

E. S. Sundholm ◽

R. E. Presley ◽

K. Hoshino ◽

C. C. Knutson ◽

R. L. Hoffman ◽

...

Keyword(s):

Barrier Layer ◽

Silicon Oxide ◽

Oxide Semiconductors ◽

Amorphous Oxide ◽

Oxide Barrier

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The grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization

Applied Physics Letters ◽

10.1063/1.124400 ◽

1999 ◽

Vol 75 (4) ◽

pp. 460-462 ◽

Cited By ~ 4

Author(s):

Kee-Chan Park ◽

Jae-Hong Jeon ◽

Cheol-Min Park ◽

Min-Cheol Lee ◽

Min-Koo Han ◽

...

Keyword(s):

Grain Growth ◽

Excimer Laser ◽

Polycrystalline Silicon ◽

Silicon Oxide ◽

Silicon Film ◽

Blocking Effect ◽

Laser Recrystallization ◽

Oxide Barrier ◽

Polycrystalline Silicon Film

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Silicon Field Emitter Array by Fast Anodization Method

MRS Proceedings ◽

10.1557/proc-621-r5.4.1 ◽

2000 ◽

Vol 621 ◽

Cited By ~ 1

Author(s):

Y.M. Fung ◽

W.Y. Cheung ◽

I.H. Wilson ◽

J.B. Xu ◽

S.P. Wong

Keyword(s):

Current Density ◽

Silicon Oxide ◽

Emission Current Density ◽

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

Isotropic Etching ◽

Field Emitters ◽

Emitter Array ◽

Field Emitter Array

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

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