Silicon oxide barrier films deposited on PET foils in pulsed plasmas: influence of substrate bias on deposition process and film properties

2013 ◽  
Vol 46 (8) ◽  
pp. 084013 ◽  
Author(s):  
S Steves ◽  
B Ozkaya ◽  
C-N Liu ◽  
O Ozcan ◽  
N Bibinov ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Deposition Process ◽  
Substrate Bias ◽  
Film Properties ◽  
Pulsed Plasmas ◽  
Barrier Films ◽  
Oxide Barrier ◽  
Influence Of Substrate ◽  
Pet Foils

Silicon Oxide Barrier Films Deposited on Polycarbonate Substrates in Pulsed Plasmas

2019 ◽  
Vol 40 (2) ◽  
pp. 607-623
Author(s):  
Shaham Shafaei ◽  
Lanti Yang ◽  
Marcel Rudolph ◽  
Peter Awakowicz
Keyword(s):  
Silicon Oxide ◽  
Pulsed Plasmas ◽  
Barrier Films ◽  
Oxide Barrier

Plasma-deposited silicon oxide barrier films on polyethersulfone substrates: temperature and thickness effects

2005 ◽  
Vol 197 (2-3) ◽  
pp. 253-259 ◽  
Author(s):  
D.S. Wuu ◽  
W.C. Lo ◽  
C.C. Chiang ◽  
H.B. Lin ◽  
L.S. Chang ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Barrier Films ◽  
Oxide Barrier

Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD

1993 ◽  
Vol 164-166 ◽  
pp. 1127-1130 ◽  
Author(s):  
S. Xu ◽  
M. Hundhausen ◽  
J. Ristein ◽  
B. Yan ◽  
L. Ley
Keyword(s):  
Substrate Bias ◽  
Plasma Cvd ◽  
Influence Of Substrate

Growth Mechanism and Film Properties in Pulsed Laser-Plasma Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
S. Metev ◽  
K. Meteva
Keyword(s):  
Laser Plasma ◽  
Growth Process ◽  
Plasma Deposition ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Experimental Investigations ◽  
Direct Relation ◽  
Film Properties ◽  
Experimental Conditions ◽  
Laser Flux

AbstractIn the paper the results of a theoretical investigation of the growth process of laser-plasma deposited thin films are discussed. A kinetic approach has been used to establish direct relation between experimental conditions (laser flux density, substrate temperature) and film properties (thickness, structure). The results of some experimental investigations of the deposition process are presented confirming the general conclusions of the developed theoretical model.

Influence of substrate bias voltage on the properties of sputtered nickel oxide thin films

2012 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
Ch. Seshendra Reddy ◽  
Y. Ashok Kumar Reddy ◽  
R. Lydia ◽  
P. Sreedhara Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Oxide Thin Films ◽  
Substrate Bias Voltage ◽  
Influence Of Substrate ◽  
Nickel Oxide Thin Films

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Sign in / Sign up

Export Citation Format

Share Document