Strained-Si heterostructure field effect devices: Strain-engineering in CMOS technology

2007 ◽  
Author(s):  
C. K. Maiti
Keyword(s):  
Field Effect ◽  
Cmos Technology ◽  
Strain Engineering ◽  
Strained Si ◽  
Field Effect Devices

Process-strained Si (PSS) CMOS technology featuring 3D strain engineering

2004 ◽  
Author(s):  
C.-H. Ge ◽  
C.-C. Lin ◽  
C.-H. Ko ◽  
C.-C. Huang ◽  
Y.-C. Huang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Strain Engineering ◽  
Strained Si

Strained-Si Heterostructure Field Effect Devices

2007 ◽  
Author(s):  
C.K Maiti ◽  
S Chattopadhyay ◽  
L.K Bera
Keyword(s):  
Field Effect ◽  
Strained Si ◽  
Field Effect Devices

Silicon Nanowire Field Effect Devices By Top-Down CMOS Technology

2007 ◽  
Author(s):  
N. Balasubramanian ◽  
N. Singh ◽  
S.C. Rustagi ◽  
Kavitha ◽  
Ajay Agarwal ◽  
...  
Keyword(s):  
Field Effect ◽  
Silicon Nanowire ◽  
Cmos Technology ◽  
Top Down ◽  
Field Effect Devices

scholarly journals Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

2016 ◽  
Vol 168 ◽  
pp. 514-517 ◽  
Author(s):  
A. Poghossian ◽  
T.S. Bronder ◽  
S. Scheja ◽  
C. Wu ◽  
T. Weinand ◽  
...  
Keyword(s):  
Field Effect ◽  
Dna Amplification ◽  
Label Free ◽  
Field Effect Devices

Mos digital‐to‐analog converter employing scaled field effect devices

1981 ◽  
Vol 69 (3) ◽  
pp. 889-889
Author(s):  
Ajay K. Puri ◽  
Michael J. Caruso ◽  
Stanley M. Dennison ◽  
Jay Brown
Keyword(s):  
Field Effect ◽  
Digital To Analog Converter ◽  
Analog Converter ◽  
Field Effect Devices ◽  
Digital To Analog

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

1995 ◽  
Vol 379 ◽  
Author(s):  
Jeffrey J. Welser
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Buffer Layers ◽  
Mos Transistors ◽  
Strained Si ◽  
Self Heating ◽  
Experimental Application ◽  
Heating Effects ◽  
Enhanced Mobility ◽  
Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon–carbon alloy stressor

2009 ◽  
Vol 518 (5) ◽  
pp. 1595-1598 ◽  
Author(s):  
Shu-Tong Chang ◽  
Wei-Ching Wang ◽  
Chang-Chun Lee ◽  
Jacky Huang
Keyword(s):  
Simulation Study ◽  
Strain Engineering ◽  
Strained Si ◽  
Silicon Carbon ◽  
Tcad Simulation

(Invited) Strain Engineering and Junction Design for Tunnel Field-Effect Transistor

2019 ◽  
Vol 33 (6) ◽  
pp. 77-87 ◽  
Author(s):  
Yee-Chia Yeo ◽  
Genquan Han ◽  
Yue Yang ◽  
Pengfei Guo
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Strain Engineering ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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