Critical role of silk fibroin secondary structure on the dielectric performances of organic thin-film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 5907-5914 ◽  
Author(s):  
Min Hong Park ◽  
Junhyung Kim ◽  
Seung Chul Lee ◽  
Se Youn Cho ◽  
Na Rae Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Secondary Structure ◽  
Silk Fibroin ◽  
Thin Film Transistors ◽  
Critical Role ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Correlation between silk fibroin (SF) secondary structure and dielectric performances of organic thin-film transistors (OTFTs) was investigated using various SF films.

Mobility enhancement by using silk fibroin in F16CuPc organic thin film transistors

2012 ◽  
Vol 13 (12) ◽  
pp. 3315-3318 ◽  
Author(s):  
Cheng-Lun Tsai ◽  
Li-Shiuan Tsai ◽  
Jenn-Chang Hwang
Keyword(s):  
Thin Film ◽  
Silk Fibroin ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance

2020 ◽  
Vol 12 (25) ◽  
pp. 28416-28425 ◽  
Author(s):  
Adara Babuji ◽  
Inés Temiño ◽  
Ana Pérez-Rodríguez ◽  
Olga Solomeshch ◽  
Nir Tessler ◽  
...  
Keyword(s):  
Thin Film ◽  
Structural Stability ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Beneficial Role ◽  
Improved Performance

Printed dual-gate organic thin film transistors and PMOS inverters on flexible substrates: Role of top gate electrode

2021 ◽  
Author(s):  
Subhash Singh ◽  
Hiroyuki Matsui ◽  
Shizuo Tokito
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polyethylene Naphthalate ◽  
Gate Electrode ◽  
Noise Margin ◽  
Dual Gate

Abstract We report printed single and dual-gate organic thin film transistors (OTFTs) and PMOS inverters fabricated on 125 µm-thick flexible polyethylene naphthalate (PEN) substrate. All the electrodes (gate, source, and drain) are inkjet-printed, while the parylene dielectric is formed by chemical vapor deposition. A dispenser system is used to print the active channel material using a blend of 2,7-dihexyl-dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (DTBDT-C6) and polystyrene (PS) in tetralin solvent, which gives highest mobility of 0.43 cm2/Vs. Dual-gate OTFTs are characterized by keeping the other gate electrode either in grounded or floating state. Floating gate electrode devices shows higher apparent mobility and current ratio due to additional capacitance of the parylene dielectric. PMOS inverter circuits are characterized in terms of gain, trip point and noise margin values calculated from the voltage transfer characteristics (VTC). Applied top gate voltage on the load OTFT control the conductivity or threshold voltage (VTh) of the bottom TFT and shift the trip point towards the middle of the VTC curve, and hence increase the noise margin.

Flexible Organic Thin-Film Transistors with Silk Fibroin as the Gate Dielectric

2011 ◽  
Vol 23 (14) ◽  
pp. 1630-1634 ◽  
Author(s):  
Chung-Hwa Wang ◽  
Chao-Ying Hsieh ◽  
Jenn-Chang Hwang
Keyword(s):  
Thin Film ◽  
Silk Fibroin ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
State Organization ◽  
P Type

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.

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