A pH-ISFET based micro sensor system on chip using standard CMOS technology

2005 ◽  
Author(s):  
Haigang Yang ◽  
Hongguang Sun ◽  
Jinghong Han ◽  
Jinbao Wei ◽  
Zengjin Lin ◽  
...  
Keyword(s):  
Cmos Technology ◽  
System On Chip ◽  
Sensor System ◽  
Micro Sensor ◽  
On Chip

RF CMOS technology scaling in High-k/metal gate era for RF SoC (system-on-chip) applications

2010 ◽  
Author(s):  
C.-H. Jan ◽  
M. Agostinelli ◽  
H. Deshpande ◽  
M. A. El-Tanani ◽  
W. Hafez ◽  
...  
Keyword(s):  
Cmos Technology ◽  
System On Chip ◽  
Rf Cmos ◽  
Metal Gate ◽  
Technology Scaling ◽  
High K ◽  
On Chip

The heterogeneous sensor system on chip

2012 ◽  
Author(s):  
C.-H. Lee ◽  
W.-Y. Chuang ◽  
C.-T. Lin ◽  
S.-H. Lin ◽  
W.-J. Wu
Keyword(s):  
System On Chip ◽  
Sensor System ◽  
On Chip

scholarly journals Design System on Chip PreAmp Embedded on Electrocardiograph Based 0,35 CMOS Technology

2019 ◽  
Vol 1175 ◽  
pp. 012095
Author(s):  
Yulisdin Mukhlis ◽  
Erma Triawati ◽  
Veronica Ernita
Keyword(s):  
Cmos Technology ◽  
System On Chip ◽  
Design System ◽  
On Chip

scholarly journals A Fully Integrated Humidity Sensor System-on-Chip Fabricated by Micro-Stamping Technology

Sensors ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 11592-11600 ◽  
Author(s):  
Che-Wei Huang ◽  
Yu-Jie Huang ◽  
Shey-Shi Lu ◽  
Chih-Ting Lin
Keyword(s):  
Humidity Sensor ◽  
System On Chip ◽  
Sensor System ◽  
Fully Integrated ◽  
On Chip

scholarly journals Nano-Power Low-Dropout Voltage Regulator Circuit in 90-nm CMOS Technology for RF SoC Applications

2021 ◽  
Vol 15 ◽  
pp. 240-248
Author(s):  
Hicham Akhamal ◽  
Mostafa Chakir ◽  
Hatim Ameziane ◽  
Mohammed Akhamal ◽  
Kamal Zared ◽  
...  
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Cmos Technology ◽  
System On Chip ◽  
Drop Out ◽  
Voltage Regulator ◽  
Weak Inversion ◽  
Low Power Dissipation ◽  
On Chip ◽  
Ldo Regulator

This paper presents a nano-power Low Drop-Out (LDO) voltage regulator circuit for Radio-Frequency System-on-Chip (RF SoC) applications, this LDO is designed for a smaller dimension due to CMOS technology and in the weak inversion region, can thus be used to minimize power loss of LDO regulator without transientresponse degradation. The proposed structure its low power dissipation make it ideal for RF system-on-chip applications that require low power dissipation under different loading conditions. In order to optimize performance for LDO, the proposed amplifier helps to minimize power of LDO regulators without using any onchip and off-chip compensation capacitors. The output spot noise at 100Hz and 1 kHz are 200nV/sqrt (Hz) and 6nV/sqrt (Hz), respectively. The active area of the circuit is 850 µm2 . The regulator operates with supply voltages from 1.2V to 2V.

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