scholarly journals Low-Voltage High-Speed Ring Oscillator With a-InGaZnO TFTs

2020 ◽  
Vol 8 ◽  
pp. 584-588
Author(s):  
Bhawna Tiwari ◽  
Pydi Ganga Bahubalindruni ◽  
Angelo Santos ◽  
Ana Santa ◽  
Catia Figueiredo ◽  
...  
2021 ◽  
Author(s):  
Mohamad El-Hage

Many of today's applications require that a phase-locked loop (PLL) operate at high speeds, while maintaining reasonable phase noise and jitter performance. Voltage-controlled oscillators (VCO) are important building blocks in PLLs. More importantly, the VCO is the major contributor of phase noise in a PLL. The noisy environment, mainly due to the switching noise generated by the digital portion of these systems. imposes stringent constraints on the design of VCOs, especially phase noise or timing jitter. The switching noise originated in the digital portion of the systems are coupled to the supply and ground rails of the VCO of PLLs. Another important block of a PLL is the charge-pump, a block that is responsible for generating the control voltage to be applied to the VCO. The stability or fluctuation of the control voltage, can severely affect the phase noise performance of the VCO. The research in this thesis, centered on (i) the design considerations of CMOS charge-pumps, (ii) the timing jitter of the delay-cells of low-voltage CMOS ring-VCOs and (iii) the design of a high-speed ring oscillator. A PLL was designed using a new active inductor 6.3-GHz ring oscillator, with a tuning range of +/- 15% was designed in 0.18um CMOS technology. The ring oscillator employed active inductor loads that resulted in an improvement of about 42% in oscillation frequency when compared to the conventional resistor loaded ring oscillator.


2021 ◽  
Author(s):  
Mohamad El-Hage

Many of today's applications require that a phase-locked loop (PLL) operate at high speeds, while maintaining reasonable phase noise and jitter performance. Voltage-controlled oscillators (VCO) are important building blocks in PLLs. More importantly, the VCO is the major contributor of phase noise in a PLL. The noisy environment, mainly due to the switching noise generated by the digital portion of these systems. imposes stringent constraints on the design of VCOs, especially phase noise or timing jitter. The switching noise originated in the digital portion of the systems are coupled to the supply and ground rails of the VCO of PLLs. Another important block of a PLL is the charge-pump, a block that is responsible for generating the control voltage to be applied to the VCO. The stability or fluctuation of the control voltage, can severely affect the phase noise performance of the VCO. The research in this thesis, centered on (i) the design considerations of CMOS charge-pumps, (ii) the timing jitter of the delay-cells of low-voltage CMOS ring-VCOs and (iii) the design of a high-speed ring oscillator. A PLL was designed using a new active inductor 6.3-GHz ring oscillator, with a tuning range of +/- 15% was designed in 0.18um CMOS technology. The ring oscillator employed active inductor loads that resulted in an improvement of about 42% in oscillation frequency when compared to the conventional resistor loaded ring oscillator.


Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.


2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


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