Layout Inductance Assisted Novel Turn-on Switching Loss Recovery Technique for SiC MOSFETs

2021 ◽  
Vol 2 (4) ◽  
pp. 513-525
Author(s):  
Vamshi Krishna Miryala ◽  
Vibhav Pandey ◽  
Kamalesh Hatua ◽  
Subhashish Bhattacharya
Keyword(s):  
Switching Loss ◽  
Loss Recovery ◽  
Turn On ◽  
Recovery Technique

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

2019 ◽  
Vol 963 ◽  
pp. 873-877
Author(s):  
Wei Hua Shao ◽  
Xiao Ling Li ◽  
Hua Ping Jiang ◽  
Xuan Guo ◽  
Zheng Zeng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mathematical Models ◽  
Power Loss ◽  
Double Pulse ◽  
Experimental Results ◽  
Switching Loss ◽  
Test Rig ◽  
Pulse Test ◽  
Turn On ◽  
Boost Pfc Converter

The nature of diode reverse recovery is analyzed in this paper, and the reverse recovery loss is evaluated in a BOOST PFC converter using a silicon (Si) or silicon carbide (SiC) diode in the forward branch. Mathematical models of the forward conduction and reverse recovery losses are established to assess the influence of Si and SiC diodes. To characterize and quantify the losses related to diode reverse recovery, an 85~265V AC to 400V DC, 2kW BOOST PFC prototype is built with switching frequencies of 65kHz. It is found that the reverse-recovery inherent in a Si diode cannot be neglected. The switching loss is substantially smaller when the diode is a SiC one. In order to investigate further, a double pulse test rig is established, with the switch and the diode being either Si or SiC. The experimental results demonstrate that with a SiC diode, not only the diode conduction losses but also the transistor turn-on loss is greatly reduced.

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

2019 ◽  
Vol 963 ◽  
pp. 625-628
Author(s):  
Ajit Kanale ◽  
B. Jayant Baliga ◽  
Ki Jeong Han ◽  
Subhashish Bhattacharya
Keyword(s):  
Experimental Study ◽  
High Temperature ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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