A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration

Author(s):  
Ruoyu Hou ◽  
Jianchun Xu ◽  
Di Chen
2020 ◽  
Vol 67 (12) ◽  
pp. 5454-5459
Author(s):  
Xuan Li ◽  
Shiwei Feng ◽  
Chang Liu ◽  
Yamin Zhang ◽  
Kun Bai ◽  
...  

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.


Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5915
Author(s):  
Manuel Escudero ◽  
Matteo-Alessandro Kutschak ◽  
Francesco Pulsinelli ◽  
Noel Rodriguez ◽  
Diego Pedro Morales

The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable impact on the overall efficiency of the complete power supply and constrain the upper limit of the optimum switching frequencies of the converter. Two are the main contributions to the switching loss in the secondary side rectifiers: on the one hand, the reverse recovery loss (Qrr), most noticeably while operating above the series resonant frequency; and on the other hand, the output capacitance (Coss) hysteresis loss, not previously reported elsewhere, but present in all the operating modes of the converter (under and above the series resonant frequency). In this paper, a new technique is proposed for the measurement of the switching losses in the rectifiers of the LLC and other isolated converters. Moreover, two new circuits are introduced for the isolation and measurement of the Coss hysteresis loss, which can be applied to both high-voltage and low-voltage semiconductor devices. Finally, the analysis is experimentally demonstrated, characterizing the switching loss of the rectifiers in a 3 kW LLC converter (410 V input to 50 V output). Furthermore, the Coss hysteresis loss of several high-voltage and low-voltage devices is experimentally verified in the newly proposed measurement circuits.


2019 ◽  
Vol 40 (12) ◽  
pp. 1965-1968 ◽  
Author(s):  
Chao Liu ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Yijun Shi ◽  
Qi Zhou ◽  
...  

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