Analytical Estimation of Turn on Switching Loss of SiC mosfet and Schottky Diode Pair From Datasheet Parameters

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Temperature Variation Effects on Current-Voltage (i-v) Characteristics of n-GaN Schottky Diode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.517.141 ◽

2006 ◽

Vol 517 ◽

pp. 141-146

Author(s):

Tarriq Munir ◽

Azlan Abdul Aziz ◽

Mat Johar Abdullah ◽

Naser Mahmoud Ahmed

Keyword(s):

Low Temperature ◽

Carrier Concentration ◽

Temperature Variation ◽

Schottky Diode ◽

Reverse Bias ◽

Pt Electrode ◽

Turn On ◽

Bandgap Narrowing ◽

Current Voltage ◽

Higher Temperature

We focus in this paper the temperature variation effects on the current – voltage ( I-V) characteristics of n-GaN schottky diode. The diode was doped with carrier concentration 1*1013cm-3 and Pt electrode was used. The simulated current were obtained at temperatures from 50K to 500K and voltage up to 2Volt. We use the Srh (Schokley read hall), Cvt (Lombardi Model), Auger (Auger), Fermi (Fermi Dirac), Impact, Bgn (Bandgap Narrowing), Complete ioniz model to get the schottky rectifying current – voltage (I-V) characteristics.. We find that by increasing the temperature from 50K to 500K, the forward schottky rectifying current decreases from 2.7187 Amp to 0.383 Amp. while the forward turn – on voltage decreases. In reverse bias at low temperature the current is high and we increase the temperature the current decreases. The breakdown voltage decreases at higher temperature.

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A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2017.8170542 ◽

2017 ◽

Cited By ~ 15

Author(s):

Ruoyu Hou ◽

Jianchun Xu ◽

Di Chen

Keyword(s):

High Voltage ◽

Switching Loss ◽

Turn On ◽

Gan Hemts

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Power Loss Comparison in a BOOST PFC Circuit Considering the Reverse Recovery of the Forward Diode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.873 ◽

2019 ◽

Vol 963 ◽

pp. 873-877

Author(s):

Wei Hua Shao ◽

Xiao Ling Li ◽

Hua Ping Jiang ◽

Xuan Guo ◽

Zheng Zeng ◽

...

Keyword(s):

Silicon Carbide ◽

Mathematical Models ◽

Power Loss ◽

Double Pulse ◽

Experimental Results ◽

Switching Loss ◽

Test Rig ◽

Pulse Test ◽

Turn On ◽

Boost Pfc Converter

The nature of diode reverse recovery is analyzed in this paper, and the reverse recovery loss is evaluated in a BOOST PFC converter using a silicon (Si) or silicon carbide (SiC) diode in the forward branch. Mathematical models of the forward conduction and reverse recovery losses are established to assess the influence of Si and SiC diodes. To characterize and quantify the losses related to diode reverse recovery, an 85~265V AC to 400V DC, 2kW BOOST PFC prototype is built with switching frequencies of 65kHz. It is found that the reverse-recovery inherent in a Si diode cannot be neglected. The switching loss is substantially smaller when the diode is a SiC one. In order to investigate further, a double pulse test rig is established, with the switch and the diode being either Si or SiC. The experimental results demonstrate that with a SiC diode, not only the diode conduction losses but also the transistor turn-on loss is greatly reduced.

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Turn-On Voltage Shift of Metal–Insulator–Oxide Semiconductor Thin-Film Diode by Adding Schottky Diode in Reverse Direction

ACS Applied Electronic Materials ◽

10.1021/acsaelm.8b00138 ◽

2019 ◽

Vol 1 (4) ◽

pp. 530-537 ◽

Cited By ~ 2

Author(s):

Jun-Woo Park ◽

Donggun Lee ◽

Nam-Kwang Cho ◽

Jinwon Lee ◽

Youn Sang Kim

Keyword(s):

Thin Film ◽

Schottky Diode ◽

Oxide Semiconductor ◽

Reverse Direction ◽

Metal Insulator ◽

Voltage Shift ◽

Turn On ◽

Semiconductor Thin Film

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Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.625 ◽

2019 ◽

Vol 963 ◽

pp. 625-628

Author(s):

Ajit Kanale ◽

B. Jayant Baliga ◽

Ki Jeong Han ◽

Subhashish Bhattacharya

Keyword(s):

Experimental Study ◽

High Temperature ◽

Switching Loss ◽

Switching Circuit ◽

Inductive Load ◽

Switching Performance ◽

Turn On ◽

Switching Losses ◽

High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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