Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts

2020 ◽  
Vol 10 (5) ◽  
pp. 1239-1245
Author(s):  
Wenhao Chen ◽  
Josua Stuckelberger ◽  
Wenjie Wang ◽  
Sieu Pheng Phang ◽  
Di Kang ◽  
...  
Keyword(s):  
Deposition Power ◽  
Phosphorus Doped

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

scholarly journals Metal-free porous phosphorus-doped g-C3N4 photocatalyst achieving efficient synthesis of benzoin

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12682-12686
Author(s):  
Yuanjin Li ◽  
Shuhui Wang ◽  
Jin Wu ◽  
Qiuyan Wang ◽  
Changqiu Ma ◽  
...  
Keyword(s):  
Benzyl Alcohol ◽  
Conversion Rate ◽  
Oxygen Activation ◽  
Superoxide Radicals ◽  
Efficient Synthesis ◽  
Metal Free ◽  
Phosphorus Doped

Porous phosphorus-doped g-C3N4 (PCNT) has intensive oxygen activation ability to generate superoxide radicals, and can efficiently catalyze synthesis of benzoin from benzyl alcohol, with conversion rate and selectivity near to 100%.

scholarly journals Phosphorus-doped activated carbon catalyst for n-hexane dehydroaromatization reaction

2021 ◽  
pp. 106318
Author(s):  
Yong Li ◽  
Hong Zhao ◽  
Siyuan Chen ◽  
Shuhao Bao ◽  
Feifei Xing ◽  
...  
Keyword(s):  
Activated Carbon ◽  
Carbon Catalyst ◽  
Phosphorus Doped

scholarly journals Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

2021 ◽  
Vol 129 (10) ◽  
pp. 105701
Author(s):  
I. Stenger ◽  
M.-A. Pinault-Thaury ◽  
N. Temahuki ◽  
R. Gillet ◽  
S. Temgoua ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Homoepitaxial Layers ◽  
Phosphorus Doped

scholarly journals Preparation and Properties of Mo Coating on H13 Steel by Electro Spark Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3700
Author(s):  
Wenquan Wang ◽  
Ming Du ◽  
Xinge Zhang ◽  
Chengqun Luan ◽  
Yingtao Tian
Keyword(s):  
Corrosion Resistance ◽  
Service Life ◽  
Deposition Time ◽  
Deposition Process ◽  
H13 Steel ◽  
Carbide Phases ◽  
Metallurgical Bonding ◽  
Wear And Corrosion ◽  
Deposition Power ◽  
Wear And Corrosion Resistance

H13 steel is often damaged by wear, erosion, and thermal fatigue. It is one of the essential methods to improve the service life of H13 steel by preparing a coating on it. Due to the advantages of high melting point, good wear, and corrosion resistance of Mo, Mo coating was fabricated on H13 steel by electro spark deposition (ESD) process in this study. The influences of the depositing parameters (deposition power, discharge frequency, and specific deposition time) on the roughness of the coating, thickness, and properties were investigated in detail. The optimized depositing parameters were obtained by comparing roughness, thickness, and crack performance of the coating. The results show that the cross-section of the coating mainly consisted of strengthening zone and transition zone. Metallurgical bonding was formed between the coating and substrate. The Mo coating mainly consisted of Fe9.7Mo0.3, Fe-Cr, FeMo, and Fe2Mo cemented carbide phases, and an amorphous phase. The Mo coating had better microhardness, wear, and corrosion resistance than substrate, which could significantly improve the service life of the H13 steel.

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped
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