Analytical Modeling of Surface Potential and Drain Current for Virtually Doped Symmetrical Dielectric Modulated BioFET

2020 ◽  
Vol 20 (9) ◽  
pp. 4749-4757
Author(s):  
Nawaz Shafi ◽  
Chitrakant Sahu ◽  
C. Periasamy
Keyword(s):  
Surface Potential ◽  
Analytical Modeling ◽  
Drain Current

3D Analytical Modeling Of Surface Potential And Threshold Voltage Model Of Dm Fintfet With Dual Hetero Gate Oxide Structure

2021 ◽  
Vol 12 (2) ◽  
pp. 1245-1259
Author(s):  
Ajay kumar Dharmireddy , Et. al.
Keyword(s):  
Surface Potential ◽  
Threshold Voltage ◽  
Analytical Modeling ◽  
Drain Current ◽  
Gate Oxide ◽  
Tunneling Model ◽  
Oxide Structure ◽  
Weighted Sum Method ◽  
Low Leakage ◽  
Threshold Voltage Model

This paper proposed on basis of a perimeter-weighted-sum method for the construction of a 3D-Analytical Modeling of double metalFin structure TFET with dual hetero gate oxide structure. The DM model device dividing into a symmetrical and asymmetrical dual-gate TFETs, and then resolving 3D architectures. The surface potential and the electrical field (E) achieved by resolving the Poisson 3D equation. The drain current (ID) is eventually calculated using Kane tunneling model to calculate the tunneling generation rate. Threshold voltage model also developed based on the charge inversion model. The performance analysis of dual hetero gate oxide Fin TFET device together with dual dielectric engineering techniques results in enhanced drain current and reduced SCE’s of low leakage current, threshold voltage roll-off and drain induced barrier lowering.

Analytical Modeling of Surface Potential and Figure of Merit Computation for Planar Junctionless pH Sensing BioFET

2021 ◽  
pp. 1-1
Author(s):  
Nawaz Shafi ◽  
Aasif Mohamad Bhat ◽  
Jaydeep Singh Parmar ◽  
Chitrakant Sahu ◽  
Periasamy C
Keyword(s):  
Surface Potential ◽  
Figure Of Merit ◽  
Analytical Modeling ◽  
Ph Sensing
Sign in / Sign up

Export Citation Format

Share Document