High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
2003 ◽
Vol 24
(7)
◽
pp. 469-471
◽
Keyword(s):
2020 ◽
Vol 41
(1)
◽
pp. 54-57
◽
Keyword(s):
1988 ◽
Vol 49
(C4)
◽
pp. C4-779-C4-782
◽