Inhibiting the Kink Effect and Hot-Carrier Stress Degradation Using Dual-Gate Low-Temperature Poly-Si TFTs

2020 ◽  
Vol 41 (1) ◽  
pp. 54-57 ◽  
Author(s):  
Hong-Chih Chen ◽  
Hong-Yi Tu ◽  
Hui-Chun Huang ◽  
Wei-Chih Lai ◽  
Ting-Chang Chang ◽  
...  
2006 ◽  
Vol 910 ◽  
Author(s):  
Joong Hyun Park ◽  
Woo Jin Nam ◽  
Jae Hoon Lee ◽  
Min Koo Han

AbstractAn asymmetric dual gate poly-Si thin film transistors (TFTs), which is consist a long-gate TFT and a short-gate TFT, were fabricated in order to suppress the kink current and increase the reliability. The long-gate TFT operates in a linear regime and limits the total current flow by its current operation region. The asymmetric dual-gate does not exhibit from the kink current in a high drain bias due to the distribution of lateral electric field. The asymmetric dual-gate structure improves kink-free characteristics compared with conventional single and dual-gate TFTs. The hot-carrier stress reliability is successfully improved due to kink current suppression.


2020 ◽  
Vol 109 ◽  
pp. 113643
Author(s):  
Federico Giuliano ◽  
Paolo Magnone ◽  
Simone Pistollato ◽  
Andrea Natale Tallarico ◽  
Susanna Reggiani ◽  
...  

2019 ◽  
Vol 40 (4) ◽  
pp. 498-501
Author(s):  
Kai-Chun Chang ◽  
Jih-Chien Liao ◽  
Ting-Chang Chang ◽  
Chien-Hung Yeh ◽  
Chien-Yu Lin ◽  
...  

Author(s):  
H. Enichlmair ◽  
J. M. Park ◽  
S. Carniello ◽  
B. Loeffler ◽  
R. Minixhofer ◽  
...  

2021 ◽  
pp. 1-1
Author(s):  
Jian-Jie Chen ◽  
Po-Hsun Chen ◽  
Ting-Chang Chang ◽  
Yu-Fa Tu ◽  
Kuan-Ju Zhou ◽  
...  

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