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Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node
IEEE Electron Device Letters
◽
10.1109/led.2019.2899630
◽
2019
◽
Vol 40
(4)
◽
pp. 498-501
Author(s):
Kai-Chun Chang
◽
Jih-Chien Liao
◽
Ting-Chang Chang
◽
Chien-Hung Yeh
◽
Chien-Yu Lin
◽
...
Keyword(s):
Metal Gate
◽
Hot Carrier
◽
High K
◽
Hot Carrier Stress
◽
Stress Degradation
Download Full-text
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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks
IEEE Electron Device Letters
◽
10.1109/led.2010.2071851
◽
2010
◽
Author(s):
Won-Ho Choi
◽
Chang-Young Kang
◽
Jung-Woo Oh
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Byoung-Hun Lee
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Prashant Majhi
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Keyword(s):
High Performance
◽
Negative Bias
◽
Gate Stacks
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Metal Gate
◽
Hot Carrier
◽
High K
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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
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Taekyung Oh
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Bongkoo Kang
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Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
Download Full-text
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
Microelectronics Reliability
◽
10.1016/j.microrel.2012.06.011
◽
2012
◽
Vol 52
(9-10)
◽
pp. 1901-1904
◽
Cited By ~ 1
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Chiho Lee
◽
Jeongsoo Park
◽
...
Keyword(s):
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
◽
Enhanced Degradation
Download Full-text
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors
Microelectronics Reliability
◽
10.1016/j.microrel.2020.113643
◽
2020
◽
Vol 109
◽
pp. 113643
Author(s):
Federico Giuliano
◽
Paolo Magnone
◽
Simone Pistollato
◽
Andrea Natale Tallarico
◽
Susanna Reggiani
◽
...
Keyword(s):
Hot Carrier
◽
Hot Carrier Stress
◽
Stress Degradation
◽
Tcad Simulation
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Profiling of Channel-Hot-Carrier Stress-Induced Trap Distributions Along Channel and Gate Dielectric in High-$k$ Gated MOSFETs by a Modified Charge Pumping Technique
IEEE Transactions on Electron Devices
◽
10.1109/ted.2014.2303885
◽
2014
◽
Vol 61
(4)
◽
pp. 936-942
◽
Cited By ~ 6
Author(s):
Chun-Chang Lu
◽
Kuei-Shu Chang-Liao
◽
Che-Hao Tsao
◽
Tien-Ko Wang
◽
Hsueh-Chao Ko
◽
...
Keyword(s):
Gate Dielectric
◽
Charge Pumping
◽
Hot Carrier
◽
High K
◽
Hot Carrier Stress
Download Full-text
New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs
2011 International Reliability Physics Symposium
◽
10.1109/irps.2011.5784516
◽
2011
◽
Cited By ~ 1
Author(s):
Hyun Chul Sagong
◽
Chang Yong Kang
◽
Chang-Woo Sohn
◽
Min Sang Park
◽
Do-Young Choi
◽
...
Keyword(s):
Small Signal
◽
Metal Gate
◽
Hot Carrier
◽
Signal Parameters
◽
High K
◽
Hot Carrier Degradation
Download Full-text
Hot carrier stress degradation modes in p-type high voltage LDMOS transistors
2009 IEEE International Reliability Physics Symposium
◽
10.1109/irps.2009.5173291
◽
2009
◽
Cited By ~ 9
Author(s):
H. Enichlmair
◽
J. M. Park
◽
S. Carniello
◽
B. Loeffler
◽
R. Minixhofer
◽
...
Keyword(s):
High Voltage
◽
Hot Carrier
◽
Hot Carrier Stress
◽
Stress Degradation
◽
P Type
◽
Degradation Modes
Download Full-text
Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.02bc10
◽
2012
◽
Vol 51
(2S)
◽
pp. 02BC10
◽
Cited By ~ 2
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
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High K
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Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacks
2009 Spanish Conference on Electron Devices
◽
10.1109/sced.2009.4800475
◽
2009
◽
Cited By ~ 2
Author(s):
E. Amat
◽
T. Kauerauf
◽
R. Degraeve
◽
R. Rodriguez
◽
M. Nafria
◽
...
Keyword(s):
Gate Stacks
◽
Metal Gate
◽
Short Channel
◽
Hot Carrier
◽
High K
◽
Hot Carrier Degradation
Download Full-text
RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature
2009 IEEE International Reliability Physics Symposium
◽
10.1109/irps.2009.5173397
◽
2009
◽
Cited By ~ 1
Author(s):
Hyun Chul Sagong
◽
Kyong Taek Lee
◽
Seung-Ho Hong
◽
Hyun-Sik Choi
◽
Gil-Bok Choi
◽
...
Keyword(s):
Cryogenic Temperature
◽
Metal Gate
◽
Hot Carrier
◽
High K
◽
Hot Carrier Effects
◽
High K Dielectric
Download Full-text
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