Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate

An electrically alterable nonvolatile memory cell using a floating-gate structure

1979 ◽  
Vol 26 (4) ◽  
pp. 576-586 ◽  
Author(s):  
D.C. Guterman ◽  
I.H. Rimawi ◽  
Te-Long Chiu ◽  
R.D. Halvorson ◽  
D.J. McElroy
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Gate Structure

An electrically alterable nonvolatile memory cell using a floating-gate structure

1979 ◽  
Vol 14 (2) ◽  
pp. 498-508 ◽  
Author(s):  
D.C. Guterman ◽  
I.H. Rimawi ◽  
R.D. Halvorson ◽  
D.J. McElroy
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Gate Structure

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

2010 ◽  
Author(s):  
Sharon Cui ◽  
Dongseog Eun ◽  
Bozidar Marinkovic ◽  
Cheng-Yi Peng ◽  
Xiao Pan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Dual Role
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