Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Nonvolatile memory (NVM) devices with nitride-nitride-oxynitride (NNO) stack structure using Si-rich silicon nitride (SiNx) as charge trapping layer on glass substrate were fabricated. Amorphous silicon clusters existing in the Si-rich SiNxlayer enhance the charge storage capacity of the devices. Low temperature poly-silicon (LTPS) technology, plasma-assisted oxidation/nitridation method to form a uniform ultra-thin tunneling layer, and an optimal Si-rich SiNxcharge trapping layer were used to fabricate NNO NVM devices with different tunneling thickness 2.3, 2.6 and 2.9 nm. The increase memory window, lower voltage operation but little scarifying in retention characteristics of nitride trap NVM devices had been accomplished by reducing the tunnel oxide thickness. The fabricated NVM devices with 2.9 nm tunneling thickness shows excellent electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low operating voltage of less than ±9 V and a large memory window of 2.7 V, which remained greater than 72% over a period of 10 years.

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Robust Data Retention and Superior Endurance SONOS Nonvolatile Memory with NH3 Plasma Treated and Pd NCs Embedded Charge Storage Layer

10.7567/ssdm.2011.f-5-3 ◽

2011 ◽

Author(s):

S. H. Liu ◽

W. L. Yang ◽

S. T. Chen ◽

M. R. Ye ◽

T. S. Chao

Keyword(s):

Nonvolatile Memory ◽

Charge Storage ◽

Data Retention

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Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2090883 ◽

2011 ◽

Vol 58 (2) ◽

pp. 370-375 ◽

Cited By ~ 24

Author(s):

Minghua Tang ◽

Xiaolei Xu ◽

Zhi Ye ◽

Yoshihiro Sugiyama ◽

Hiroshi Ishiwara

Keyword(s):

Buffer Layer ◽

Nonvolatile Memory ◽

Data Retention ◽

Retention Characteristics ◽

Memory Applications

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Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

IEEE Transactions on Electron Devices ◽

10.1109/16.944189 ◽

2001 ◽

Vol 48 (9) ◽

pp. 2002-2008 ◽

Cited By ~ 36

Author(s):

Sung-Min Yoon ◽

H. Ishiwara

Keyword(s):

Memory Cell ◽

Data Retention ◽

Retention Characteristics ◽

Ferroelectric Memory

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An highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) ◽

10.1109/edssc.2003.1283481 ◽

2004 ◽

Author(s):

Tsz Yin Man ◽

Mansun Chan

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

Charge Storage ◽

Oxide Charge ◽

Nitride Oxide

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Performance enhancement of TiSi2 coated Si nanocrystal memory device

MRS Proceedings ◽

10.1557/proc-1160-h01-05 ◽

2009 ◽

Vol 1160 ◽

Cited By ~ 4

Author(s):

Huimei Zhou ◽

Jianlin Liu

Keyword(s):

Nonvolatile Memory ◽

Storage Capacity ◽

Performance Enhancement ◽

Memory Device ◽

Charge Storage ◽

Si Nanocrystal ◽

Device Applications ◽

Retention Characteristics ◽

Cmos Compatible ◽

Nanocrystal Memory

AbstractSelf-aligned TiSi2 coated Si nanocrystal nonvolatile memory is fabricated. This kind of MOSFET memory device is not only thermally stable, but also shows better performance in charge storage capacity, writing, erasing speed and retention characteristics. This indicates that CMOS compatible silicidation process to fabricate TiSi2 coated Si nanocrystal memory is promising in memory device applications.

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High-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications

International Journal of Electronics and Electical Engineering ◽

10.47893/ijeee.2012.1015 ◽

2012 ◽

pp. 74-77

Author(s):

Somnath Mondal ◽

Fa-Hsyang Chen ◽

Tung-Ming Pan

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

High Performance ◽

Sandwich Structure ◽

Oxygen Vacancies ◽

Memory Cell ◽

Switching Behavior ◽

Electrical Performance ◽

Data Retention ◽

Memory Applications

Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role in resistive switching. Under negative bias, oxygen vacancies or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance switching behavior was observed with high resistance ratio of about 105 with excellent data retention, and good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure and excellent electrical performance of the memory cell making them ideal for the basis for highspeed, high-density, nonvolatile memory applications.

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