Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

2018 ◽  
Author(s):  
D. Birmpiliotis ◽  
M. Koutsoureli ◽  
L. Buhagier ◽  
G. Papaioannou ◽  
A. Ziaei
Keyword(s):  
Bottom Electrode ◽  
Single Layer ◽  
Capacitive Switches ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Low Dielectric ◽  
Insulator Film ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Abstract Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.

scholarly journals Assessment of dielectric charging in micro-electro-mechanical system capacitive switches

2013 ◽  
Vol 26 (3) ◽  
pp. 239-245
Author(s):  
M. Koutsoureli ◽  
L. Michalas ◽  
G. Papaioannou
Keyword(s):  
Mechanical System ◽  
Material Properties ◽  
Micro Electro Mechanical System ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Dielectric Charging ◽  
Metal Insulator Metal ◽  
Simultaneous Assessment

The assessment of dielectric charging in MEMS capacitive switches is investigated. The information can be obtained only from simultaneous assessment of Metal-Insulator-Metal capacitance and MEMS capacitive switches the former allowing the determination of material properties and the latter of the device.

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

2019 ◽  
Vol 60 ◽  
pp. 33-41 ◽  
Author(s):  
Cristian Ravariu ◽  
Elena Manea ◽  
Catalin Parvulescu ◽  
Dan Mihaiescu
Keyword(s):  
Conduction Mechanism ◽  
Metal Structure ◽  
Static Characteristics ◽  
Leakage Currents ◽  
Metal Insulator ◽  
Inversion Channel ◽  
Tunneling Conduction ◽  
Metal Insulator Metal ◽  
Dual Gate ◽  
Effect Transistor

This paper starts from the leakage currents through the gates of the last MOSFET generations and propose a related structure, which can be inherently included as parasitic device in any future MOSFET sub-22nm or can be deliberated fabricated to induce its own behavior. This structure is abbreviated in this paper by p-NOI (planar-Nothing On Insulator) and it can be simply produced by the planar Si-technology. Its concept is derived from the NOI (Nothing On Insulator) concept, but replaces the vacuum with oxide. The conduction mechanism is based on a thin oxide tunneling, under the Fowler-Nordheim's law. The current flow occurs from a source to a lateral drain, without an inversion channel and without a lateral pn junction, as in the MOSFET case. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. Finally, a dual gate p-NOI device is investigated. The depletion-accumulation transition is captured by the static I-V static characteristics. Using two steps of oxide, of 2nm and 10nm, a second planar-NOI structure with three terminals was studied. The (G) terminal is associated to a Gate and the (S) terminal is associated to a Source of a Field Effect Transistor. Some particular applications as diode or transistor are emphasized versus the gate biasing regime.

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

scholarly journals New insights into reliability of electrostatic capacitive RF MEMS switches

2011 ◽  
Vol 3 (5) ◽  
pp. 571-586 ◽  
Author(s):  
Usama Zaghloul ◽  
George J. Papaioannou ◽  
Bharat Bhushan ◽  
Fabio Coccetti ◽  
Patrick Pons ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Material Characterization ◽  
Rf Mems ◽  
Dielectric Material ◽  
Dielectric Films ◽  
Mems Switches ◽  
Dielectric Charging ◽  
Rf Mems Switches ◽  
Metal Insulator Metal ◽  
Mim Capacitors

Among other reliability concerns, the dielectric charging is considered the major failure mechanism which hinders the commercialization of electrostatic capacitive radio frequency micro-electro-mechanical systems (RF MEMS) switches. In this study, Kelvin probe force microscopy (KPFM) surface potential measurements have been employed to study this phenomenon. Several novel KPFM-based characterization methods have been proposed to investigate the charging in bare dielectric films, metal–insulator–metal (MIM) capacitors, and MEMS switches, and the results from these methods have been correlated. The used dielectric material is plasma-enhanced chemical vapor deposition (PECVD) silicon nitride. The SiNx films have been charged by using a biased atomic force microscope (AFM) tip or by electrically stressing MIM capacitors and MEMS switches. The influence of several parameters on the dielectric charging has been studied: dielectric film thickness, deposition conditions, and under layers. Fourier transform infra-red (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) material characterization techniques have been used to determine the chemical bonds and compositions, respectively, of the SiNx films. The data from the physical material characterization have been correlated to the KPFM results. The study provides an accurate understanding of the charging/discharging processes in dielectric films implemented in electrostatic MEMS devices.

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