Novel Aluminum Segregation at NiSi/ ${p}^{+}$-Si Source/Drain Contact for Drive Current Enhancement in $P$-Channel FinFETs

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

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Influence of Drive Current to Unbalanced-Magnetic-Pull in Spindle Motor

Asia-Pacific Magnetic Recording Conference 2006 ◽

10.1109/apmrc.2006.365920 ◽

2006 ◽

Cited By ~ 4

Author(s):

Chao Bi ◽

Nay Lin Htun Aung ◽

Hla Nu Phyu ◽

Quan Jiang ◽

Song Lin

Keyword(s):

Spindle Motor ◽

Drive Current ◽

Unbalanced Magnetic Pull

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3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

Indonesian Journal of Electrical Engineering and Computer Science ◽

10.11591/ijeecs.v12.i3.pp1358-1365 ◽

2018 ◽

Vol 12 (3) ◽

pp. 1358

Author(s):

Ameer F. Roslan ◽

F. Salehuddin ◽

A.S. M.Zain ◽

K.E. Kaharudin ◽

H. Hazura ◽

...

Keyword(s):

Leakage Current ◽

Electrical Characterization ◽

Channel Length ◽

Double Gate ◽

Short Channel ◽

3D Design ◽

Drive Current ◽

Minimum Requirement ◽

Technology Roadmap ◽

Low Performance

<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>

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The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

10.20944/preprints201902.0093.v1 ◽

2019 ◽

Cited By ~ 1

Author(s):

Heng-Sheng Huang ◽

Ping-Ray Huang ◽

Mu-Chun Wang ◽

Shuang-Yuan Chen ◽

Shea-Jue Wang ◽

...

Keyword(s):

Electric Fields ◽

Current Model ◽

Atomic Layer ◽

Diffusion Current ◽

Electrical Performance ◽

Short Channel ◽

Drive Current ◽

Layer Deposition ◽

And Diffusion ◽

Better Than

A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

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