High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

2020 ◽  
Vol 41 (12) ◽  
pp. 1794-1797
Author(s):  
Zhe Li ◽  
Yanan Cheng ◽  
Yu Xu ◽  
Zhuangzhuang Hu ◽  
Weidong Zhu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Multiplication Process ◽  
Carrier Multiplication ◽  
Solar Blind

scholarly journals High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process

2015 ◽  
Vol 23 (10) ◽  
pp. 13554 ◽  
Author(s):  
G. C. Hu ◽  
C. X. Shan ◽  
Nan Zhang ◽  
M. M. Jiang ◽  
S. P. Wang ◽  
...  
Keyword(s):  
High Gain ◽  
Multiplication Process ◽  
Carrier Multiplication ◽  
Solar Blind

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

2021 ◽  
pp. 2010303
Author(s):  
Ki‐Tae Kim ◽  
Hye‐Jin Jin ◽  
Wonjun Choi ◽  
Yeonsu Jeong ◽  
Hyung Gon Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
High Performance ◽  
Large Work

High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si

2001 ◽  
Vol 188 (1) ◽  
pp. 325-328 ◽  
Author(s):  
J.-Y. Duboz ◽  
J.-L. Reverchon ◽  
D. Adam ◽  
B. Damilano ◽  
F. Semond ◽  
...  
Keyword(s):  
High Performance ◽  
Solar Blind

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

L-Shaped High Performance Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor

2021 ◽  
pp. 1-1
Author(s):  
Shazia Rashid ◽  
Faisal Bashir ◽  
Farooq A. Khanday ◽  
M. Rafiq Beigh
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Label Free

Designation of bevel junction termination extension structure for high-performance vertical GaN Schottky barrier diode

2021 ◽  
pp. 107048
Author(s):  
Tingting wang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Shaoheng Cheng ◽  
Liuan Li ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Performance ◽  
Schottky Barrier Diode

Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee
Keyword(s):  
High Performance ◽  
Switching Time ◽  
Ultraviolet Photodetector ◽  
Assembly Method ◽  
Solar Blind

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.

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