Stable iron quantum wire with atomic-scale was successfully fabricated and electrically characterized with an electrochemical method in solution by a home-made electrochemically controlled system. By careful controlling the etching/deposition process, stepwise conductance behavior could be clearly observed. The I-V curve of the formed iron quantum wire showed the ohmic behavior with low bias voltage. The work is of great significance for molecular electronics, interface electrochemistry and sensing.
AbstractWe report the fabrication and characterization of segmented element power generator modules of 16 x 16 thermoelectric elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1-x(InAlAs)x with 0.6% ErAs by volume. Erbium Arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, and to form local potential barriers for electron filtering. The thermoelectric properties of ErAs:(InGaAs)1-x(InAlAs)x were characterized in terms of electrical conductivity and Seebeck coefficient from 300 K up to 830 K. Generator modules of Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x segmented elements were fabricated and an output power of 6.3 W was measured. 3D finite modeling shows that the performance of thermoelectric generator modules can further be enhanced by the improvement of the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.
Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers
