Two-Dimensional Photonic Crystals Fabricated in Monolithic Single-Crystal Silicon

ABSTRACTWe have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.

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A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

MRS Proceedings ◽

10.1557/proc-316-623 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 3

Author(s):

Steven J. Morris ◽

Shyh-Horng Yang ◽

David H. Lim ◽

AL. F. Tasch

Keyword(s):

Single Crystal ◽

Single Crystal Silicon ◽

Two Dimensional ◽

Dimensional Model ◽

Computationally Efficient ◽

Crystal Silicon ◽

Two Dimensional Model ◽

D Model ◽

Energy Dose

ABSTRACTIn this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.

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Alignment of liquid crystal E7 in composite photonic crystals based on single crystal silicon

10.1117/12.605432 ◽

2005 ◽

Cited By ~ 2

Author(s):

A. D. Remenyuk ◽

E. V. Astrova ◽

R. F. Vitman ◽

T. S. Perova ◽

V. A. Tolmachev

Keyword(s):

Liquid Crystal ◽

Photonic Crystals ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon

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Investigation into the orientation of the liquid-crystal mixture E7 in composite photonic crystals based on single-crystal silicon

Physics of the Solid State ◽

10.1134/s1063783406020326 ◽

2006 ◽

Vol 48 (2) ◽

pp. 384-391

Author(s):

A. D. Remenyuk ◽

E. V. Astrova ◽

R. F. Vitman ◽

T. S. Perova ◽

V. A. Tolmachev ◽

...

Keyword(s):

Liquid Crystal ◽

Photonic Crystals ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Crystal Mixture

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Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118370 ◽

1985 ◽

Vol 43 ◽

pp. 300-301

Author(s):

N. Lewis ◽

E. L. Hall ◽

A. Mogro-Campero ◽

R. P. Love

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Silicon On Insulator ◽

High Dose ◽

Crystal Silicon ◽

Oxygen Ion ◽

Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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