OMCVD TiN diffusion barrier for copper contact and via/interconnects structures

1998 ◽  
Author(s):  
C. Marcadal ◽  
E. Richard ◽  
J. Torres ◽  
J. Palleau ◽  
L. Ulmer ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Tin Diffusion Barrier

Preferentially oriented and amorphous Ti, TiN and Ti/TiN diffusion barrier for Cu prepared by ion beam assisted deposition (IBAD)

2002 ◽  
Vol 151-152 ◽  
pp. 434-439 ◽  
Author(s):  
Kewei Chen ◽  
Yuhui Yu ◽  
Haichuan Mu ◽  
E.Z. Luo ◽  
B. Sundaravel ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Tin Diffusion Barrier

scholarly journals Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

2010 ◽  
Vol 5 (3) ◽  
pp. 539-544 ◽  
Author(s):  
Jean-Baptiste A. Kpetsu ◽  
Pawel Jedrzejowski ◽  
Claude Côté ◽  
Andranik Sarkissian ◽  
Philippe Mérel ◽  
...  
Keyword(s):  
Growth Rate ◽  
Carbon Nanotube ◽  
Diffusion Barrier ◽  
Catalyst Layer ◽  
Ni Catalyst ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth ◽  
Tin Diffusion Barrier

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kaminska ◽  
M. Guziewicz ◽  
S. Kwiatkowski ◽  
A. Turos
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Tin Films ◽  
Specific Contact ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

1999 ◽  
Vol 563 ◽  
Author(s):  
K. Y Lu ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Tin Diffusion Barrier ◽  
Thermal Stability Of

AbstractWe have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

Diffusion Barrier Reliability with Respect to the Role of Tin Stoichiometry Between Al Metallization and Si Substrate

1996 ◽  
Vol 441 ◽  
Author(s):  
Han-Yu Tseng ◽  
Aris Christou ◽  
Dan Young ◽  
Ted Tessner ◽  
Jon Orloff
Keyword(s):  
Diffusion Barrier ◽  
Diffusion Processes ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
Tin Films ◽  
Al Metallization ◽  
High Degree ◽  
Tin Diffusion Barrier ◽  
And Diffusion

AbstractIn this study, the relation between interdiffusion in Al/ TiN thin film couples and diffusion barrier stability has been investigated. The TiN diffusion barrier was deposited by reactive sputtering in an Ar-N2 gas mixture. The stoichiometry of TiN was achieved by varying the nitrogen-to-argon ratio in the sputtering gas. Interdiffiusion occurred after annealing for 30 minutes at 475°C and 575°C. Diffusion processes and interfacial reactions with respect to TiN stoichiometry were investigated via Auger Electron Spectroscopy (AES) depth profiling and X-ray diffraction (XRD). The barrier reliability with respect to the stoichiometry changes was established; nitrogen-deficient TiN films result in a high degree of interdiffiusion and decomposition at annealing temperatures of 475°C and 575°C. AI3Ti and AlN intermetallic compounds were formed at the interfaces. The sheet resistance of Al films was measured by four-point probe method. Resistance increases for all the annealed films were due to interdiffusion between Al and TiN. The degree of interdiffusion was analyzed by using AES and XRD.

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