Diffusion Barrier Reliability with Respect to the Role of Tin Stoichiometry Between Al Metallization and Si Substrate

1996 ◽  
Vol 441 ◽  
Author(s):  
Han-Yu Tseng ◽  
Aris Christou ◽  
Dan Young ◽  
Ted Tessner ◽  
Jon Orloff
Keyword(s):  
Diffusion Barrier ◽  
Diffusion Processes ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
Tin Films ◽  
Al Metallization ◽  
High Degree ◽  
Tin Diffusion Barrier ◽  
And Diffusion

AbstractIn this study, the relation between interdiffusion in Al/ TiN thin film couples and diffusion barrier stability has been investigated. The TiN diffusion barrier was deposited by reactive sputtering in an Ar-N2 gas mixture. The stoichiometry of TiN was achieved by varying the nitrogen-to-argon ratio in the sputtering gas. Interdiffiusion occurred after annealing for 30 minutes at 475°C and 575°C. Diffusion processes and interfacial reactions with respect to TiN stoichiometry were investigated via Auger Electron Spectroscopy (AES) depth profiling and X-ray diffraction (XRD). The barrier reliability with respect to the stoichiometry changes was established; nitrogen-deficient TiN films result in a high degree of interdiffiusion and decomposition at annealing temperatures of 475°C and 575°C. AI3Ti and AlN intermetallic compounds were formed at the interfaces. The sheet resistance of Al films was measured by four-point probe method. Resistance increases for all the annealed films were due to interdiffusion between Al and TiN. The degree of interdiffusion was analyzed by using AES and XRD.

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kaminska ◽  
M. Guziewicz ◽  
S. Kwiatkowski ◽  
A. Turos
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Tin Films ◽  
Specific Contact ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

Effect of cluster-gradient architecture of nanostructured topocomposites on features of tribointeraction with heterophased material

2020 ◽  
pp. 130-135
Author(s):  
D.N. Korotaev ◽  
K.N. Poleshchenko ◽  
E.N. Eremin ◽  
E.E. Tarasov
Keyword(s):  
Wear Resistance ◽  
Titanium Alloy ◽  
Energy Dissipation ◽  
Phase Structure ◽  
Diffusion Processes ◽  
Structural Phase ◽  
High Wear Resistance ◽  
Wear Characteristics ◽  
And Diffusion

The wear resistance and wear characteristics of cluster-gradient architecture (CGA) nanostructured topocomposites are studied. The specifics of tribocontact interaction under microcutting conditions is considered. The reasons for retention of high wear resistance of this class of nanostructured topocomposites are studied. The mechanisms of energy dissipation from the tribocontact zone, due to the nanogeometry and the structural-phase structure of CGA topocomposites are analyzed. The role of triboactivated deformation and diffusion processes in providing increased wear resistance of carbide-based topocomposites is shown. They are tested under the conditions of blade processing of heat-resistant titanium alloy.

scholarly journals In situ X-ray tomography densification of firn: The role of mechanics and diffusion processes

2019 ◽  
Vol 167 ◽  
pp. 210-220 ◽  
Author(s):  
Alexis Burr ◽  
Pierre Lhuissier ◽  
Christophe L. Martin ◽  
Armelle Philip
Keyword(s):  
Diffusion Processes ◽  
X Ray ◽  
And Diffusion

EFFECT OF DIFFUSION PROCESS ON COATING IN HOT-DIPPED ALUMINIZED STEEL

2019 ◽  
Vol 26 (10) ◽  
pp. 1950070
Author(s):  
YUWEN DING ◽  
XIAOCHUN CHEN ◽  
YA LIU ◽  
XUPING SU
Keyword(s):  
Corrosion Resistance ◽  
Diffusion Process ◽  
Diffusion Path ◽  
X Ray Diffraction ◽  
X Ray ◽  
Intermetallic Coating ◽  
Diffusion Treatment ◽  
Aluminized Steel ◽  
And Diffusion

Aluminized steels possess excellent corrosion resistance due to the formation of Al-Fe solution phases and intermetallic compounds in coatings. Ni was added to baths to further improve the corrosion resistance of the coatings at high temperature. Here, the role of Ni in the formation of coatings and the effect of diffusion process on the developing of coatings were investigated. 45 steels were immersed in Al-Ni baths (Al-1mass% Ni, Al-3mass% Ni, and Al-5mass% Ni) and diffusion-treated at 1023 and 1123[Formula: see text]K for 20, 40 and 100[Formula: see text]min, respectively. The coatings of samples were analyzed via scanning electron microscopy (SEM) along with energy-dispersive X-ray spectroscopy (EDS). X-ray diffraction (XRD) was further used to confirm the types of phases that formed during diffusion treatment. The formations of intermetallic coating layers were also analyzed via the diffusion path. More continuous Al3Ni layer and compact coating were obtained with diffusion treatment at 1023[Formula: see text]K for 40[Formula: see text]min.

In Situ X-Ray Tomography Densification of Firn: Decoupling the Role of Mechanics and Diffusion Processes

2018 ◽  
Author(s):  
Alexis Burr ◽  
Pierre Lhuissier ◽  
Christophe L. Martin ◽  
Armelle Philip
Keyword(s):  
Diffusion Processes ◽  
X Ray ◽  
And Diffusion

Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

1999 ◽  
Vol 563 ◽  
Author(s):  
K. Y Lu ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Tin Diffusion Barrier ◽  
Thermal Stability Of

AbstractWe have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

Electrical and Diffusion Processes in the Adhesion of Two Polymers

1960 ◽  
Vol 33 (1) ◽  
pp. 240-244 ◽  
Author(s):  
L. P. Morozova ◽  
B. A. Krotova
Keyword(s):  
Diffusion Processes ◽  
Adhesive Bond ◽  
Time Interval ◽  
Experimental Conditions ◽  
Cellulose Esters ◽  
Adhesive Bonds ◽  
Vinyl Polymers ◽  
And Diffusion ◽  
Glass Metal

Abstract In previous publications one of us developed the concept of the electrical theory of adhesion. On the other hand, many authors have repeatedly expressed opinions concerning the role of diffusion processes during the formation of adhesive and auto-adhesive bonds. Owing to the discussion of this problem an experimental investigation of the formation of adhesive bonds acquired special significance, in particular during the addition of two high molecular materials for the purpose of clarifying the correlation of electrical and diffusion processes in the phenomena of adhesion. The shape of the adhesiogram is very significant in solving the question of the type of adhesive bond. The effect of the velocity of rupture is comparatively small if the adhesive bond depended on the phenomenon of diffusion. If the adhesive bond is of electrical nature the adhesiogram has generally three clearly expressed sections. With the aid of a roller adhesiometer we have taken the adhesiograms of a series of polymers (gum type BF, polyurethans, polyamides, a series of vinyl polymers, rubbers, guttapercha, cellulose esters, and on.). The adhesiograms of different combinations of these polymers with glass, metal and with rubbers of a Na butadiene and acrylo nitrile rubber base usually gave three clearly expressed regions. However, in some cases there were only two sections and the third was absent. Three probably exist in all but some may be located in an area of significant velocity and experimental determination becomes difficult. Under our experimental conditions of a time interval &lt;0.01 sec some could not be measured.

Pulsed Laser Deposition of Undoped and Ag-Doped Stacked Structures of YBaCuO for Bolometer Device Applications

1998 ◽  
Vol 526 ◽  
Author(s):  
D. E. Moxey ◽  
R. Kalyanaraman ◽  
A. Sharma ◽  
J. Narayan ◽  
C. B. Lee ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Superconducting Layer ◽  
Device Applications ◽  
And Diffusion

AbstractIn this paper we report our investigations related to the growth and characterization of superconducting stacked structures of YBaCuO(undoped)/YBaCuO(Ag-doped)/YSZ layers processed on Si(100) substrates. These films were deposited using pulsed laser deposition (PLD), and have been characterized using X-ray diffraction, scanning electron microscopy (SEM), and four probe electrical measurements. SIMS analysis has also been used to study the incorporation and diffusion of carbon in the superconducting layer. The focus of this work is on the issues of the role of silver in the superconductor, and its effects on the transport properties and microstructure of the structure. We also discuss the use of these films for bolometer device applications.

Diffusion of Innovation and Role of Opinion Leaders

2018 ◽  
pp. 83-93
Author(s):  
Dayane Gabriele Alves Silveira
Keyword(s):  
Diffusion Of Innovation ◽  
Decision Process ◽  
Diffusion Processes ◽  
Opinion Leaders ◽  
Innovation Networks ◽  
Factors Affecting ◽  
New Strategy ◽  
Micro Level ◽  
And Diffusion

The purposes of this study were: (1) examine the literature about innovation diffusion; (2) conduct a literature review on the innovation-decision process; (3) identify factors affecting the success of an innovation; (4) to determine a new strategy for diffusion of innovation. A structured search of the internet was undertaken to identify and appraise direct relationship between opinion leaders and diffusion of innovation. Models for describing the pattern of the diffusion processes for innovations are used by researchers. The present study went beyond the global structure of network to understand the actual position of the actors within the innovation networks. To do this, a strategy was needed that went to understand from the macro to the micro level, and then returned to the macro level to explain the structure of the authorship in innovation networks.

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