Electrical and optical properties of doped a-SiGe:H deposited by RF-sputtering

2003 ◽  
Author(s):  
J.M.T. Pereira
Keyword(s):  
Optical Properties ◽  
Rf Sputtering ◽  
Electrical And Optical Properties

Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Sputtering ◽  
Processing Parameters ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

scholarly journals The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 645 ◽  
Author(s):  
Thao ◽  
Kuo ◽  
Tuan ◽  
Tuan ◽  
Vu ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Electron Concentration ◽  
Heating Temperature ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Electrical And Optical Properties ◽  
Sputtering Power ◽  
Distorted Structure ◽  
Deposition Conditions

Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100–400 °C and 90–150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge0.07GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 1019 cm−3, a carrier conductivity of 35.2 S∙cm−1 and mobility of 4 cm2·V−1∙s−1.

Electrical and optical properties of ZnO thin films prepared by magnetron rf sputtering—influence of Al, Er and H

2007 ◽  
Vol 42 (1-6) ◽  
pp. 123-128 ◽  
Author(s):  
D. Dimova-Malinovska ◽  
H. Nichev ◽  
O. Angelov ◽  
V. Grigorov ◽  
M. Kamenova
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Sputtering ◽  
Zno Thin Films ◽  
Electrical And Optical Properties
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