The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100–400 °C and 90–150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge0.07GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 1019 cm−3, a carrier conductivity of 35.2 S∙cm−1 and mobility of 4 cm2·V−1∙s−1.

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ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

International Journal of Modern Physics B ◽

10.1142/s0217979211100357 ◽

2011 ◽

Vol 25 (20) ◽

pp. 2741-2749 ◽

Cited By ~ 3

Author(s):

J. C. ZHOU ◽

L. LI ◽

L. Y. RONG ◽

B. X. ZHAO ◽

Y. M. CHEN ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Oxide Thin Film ◽

Zno Thin Films ◽

Zno Thin Film ◽

Electrical And Optical Properties ◽

Axis Orientation ◽

Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

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Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i33.142 ◽

2019 ◽

Vol 15 (33) ◽

pp. 71-77

Author(s):

Mohammed K. Khalaf

Keyword(s):

Thin Film ◽

Thin Films ◽

Refractive Index ◽

Optical Properties ◽

Glass Substrate ◽

Rf Sputtering ◽

Rf Power ◽

Sputtering Power

Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

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