High-Density Scanning Combined with Digital Image of Real Objects for Complete Reproduction of Cultural Artifacts

2006 ◽  
Author(s):  
Junta Doi ◽  
Kentaro Shimizu ◽  
Wataru Sato
Keyword(s):  
Digital Image ◽  
High Density ◽  
Cultural Artifacts ◽  
Real Objects

An Overview of Digital Image Processing and Recognition (Invited Paper)

1982 ◽  
Vol 40 ◽  
pp. 700-702
Author(s):  
R. C. Gonzalez
Keyword(s):  
Image Processing ◽  
New York ◽  
Digital Image Processing ◽  
Digital Image ◽  
Practical Implementation ◽  
Submarine Cable ◽  
Vigorous Growth ◽  
Digitized Pictures ◽  
Processing Techniques ◽  
And Storage

Interest in digital image processing techniques dates back to the early 1920's, when digitized pictures of world news events were first transmitted by submarine cable between New York and London. Applications of digital image processing concepts, however, did not become widespread until the middle 1960's, when third-generation digital computers began to offer the speed and storage capabilities required for practical implementation of image processing algorithms. Since then, this area has experienced vigorous growth, having been a subject of interdisciplinary research in fields ranging from engineering and computer science to biology, chemistry, and medicine.

A method to measure pores and fissures in geologic materials under S.E.M. by digital image processing

1978 ◽  
Vol 36 (1) ◽  
pp. 212-213
Author(s):  
L. Montoto ◽  
M. Montoto ◽  
A. Bel-Lan
Keyword(s):  
Image Processing ◽  
Optical Microscopy ◽  
Digital Image Processing ◽  
Digital Image ◽  
Digital Processing ◽  
Free Surfaces ◽  
Geologic Materials ◽  
Automatic Information ◽  
Detector Output ◽  
Rock Specimens

INTRODUCTION.- The physical properties of rock masses are greatly influenced by their internal discontinuities, like pores and fissures. So, these need to be measured as a basis for interpretation. To avoid the basic difficulties of measurement under optical microscopy and analogic image systems, the authors use S.E.M. and multiband digital image processing. In S.E.M., analog signal processing has been used to further image enhancement (1), but automatic information extraction can be achieved by simple digital processing of S.E.M. images (2). The use of multiband image would overcome difficulties such as artifacts introduced by the relative positions of sample and detector or the typicals encountered in optical microscopy.DIGITAL IMAGE PROCESSING.- The studied rock specimens were in the form of flat deformation-free surfaces observed under a Phillips SEM model 500. The SEM detector output signal was recorded in picture form in b&w negatives and digitized using a Perkin Elmer 1010 MP flat microdensitometer.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

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