Effects of deposition temperature on the structural, optical, and electrical properties of hydrogenated of Ga-doped ZnO film

2015 ◽  
Author(s):  
Jung-Ruey Tsai ◽  
Neng-Fu Shih ◽  
Rong-Hwei Yeh
Keyword(s):  
Electrical Properties ◽  
Deposition Temperature ◽  
Optical And Electrical Properties ◽  
Zno Film ◽  
Doped Zno

The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

2015 ◽  
Vol 1120-1121 ◽  
pp. 429-434 ◽  
Author(s):  
Dan Dan Wang ◽  
Qing Qing Fang ◽  
Jing Jing Yang
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Electric Transport ◽  
Zno Film ◽  
Doped Zno

The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility,ν, and resistivity,ρ, after doped Cu. It can be found that theνdecreased from to and theρincreased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.

Preparation and characterization of monolithic HgCdTe/CdTe tandem cells

2004 ◽  
Vol 836 ◽  
Author(s):  
S. L. Wang ◽  
J. Drayton ◽  
V. Parikh ◽  
A. Vasko ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deposition Temperature ◽  
Rf Sputtering ◽  
Thermal Treatments ◽  
Zno Film ◽  
Tandem Cell ◽  
Nitrogen Doped ◽  
Doped Zno ◽  
Znte Film

ABSTRACTA prototype monolithic HgCdTe/CdTe superstrate tandem cell has been fabricated by RF sputtering, comprising a CdTe/CdS top cell, a ZnTe:N/ZnO:Al interconnect junction and a HgCdTe/CdS bottom cell. The Hg1−xCdxTe film as the bottom absorption layer was deposited by RF sputtering with 70% or 85% Cd content in the Hg1−xCdxTe magnetron target. Hg1−xCdxTe films with band gap from 0.98 eV to 1.45 eV were obtained by controlling the deposition temperature. CdCl2 thermal treatments were used to improve the Hg1−xCdxTe film electrical properties. A nitrogen-doped ZnTe film combined with an aluminium (Al) doped ZnO film formed a good interconnect junction. Results of Voc = 0.99 V and Jsc = 2.1 mA/cm2 were obtained in the best such tandem cell at one sun (AM1.5).

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