Preparation and characterization of monolithic HgCdTe/CdTe tandem cells

2004 ◽  
Vol 836 ◽  
Author(s):  
S. L. Wang ◽  
J. Drayton ◽  
V. Parikh ◽  
A. Vasko ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deposition Temperature ◽  
Rf Sputtering ◽  
Thermal Treatments ◽  
Zno Film ◽  
Tandem Cell ◽  
Nitrogen Doped ◽  
Doped Zno ◽  
Znte Film

ABSTRACTA prototype monolithic HgCdTe/CdTe superstrate tandem cell has been fabricated by RF sputtering, comprising a CdTe/CdS top cell, a ZnTe:N/ZnO:Al interconnect junction and a HgCdTe/CdS bottom cell. The Hg1−xCdxTe film as the bottom absorption layer was deposited by RF sputtering with 70% or 85% Cd content in the Hg1−xCdxTe magnetron target. Hg1−xCdxTe films with band gap from 0.98 eV to 1.45 eV were obtained by controlling the deposition temperature. CdCl2 thermal treatments were used to improve the Hg1−xCdxTe film electrical properties. A nitrogen-doped ZnTe film combined with an aluminium (Al) doped ZnO film formed a good interconnect junction. Results of Voc = 0.99 V and Jsc = 2.1 mA/cm2 were obtained in the best such tandem cell at one sun (AM1.5).

SUPERCONDUCTING PROPERTIES OF BSCCO (2223) ULTRATHIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Structural Characterization ◽  
Ultrathin Films ◽  
Rf Magnetron Sputtering ◽  
Ex Situ ◽  
Thermal Treatments ◽  
Superconducting Properties

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped ZnO Film

2014 ◽  
Vol 14 (5) ◽  
pp. 3813-3816 ◽  
Author(s):  
L. Li ◽  
C. X. Shan ◽  
X. T. Zhang ◽  
Y. M. Lu ◽  
B. D. Sun ◽  
...  
Keyword(s):  
Dominant Factor ◽  
Zno Film ◽  
Nitrogen Doped ◽  
Conduction Type ◽  
Doped Zno

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

2001 ◽  
Vol 226 (1) ◽  
pp. 123-129 ◽  
Author(s):  
Xinqiang Wang ◽  
Shuren Yang ◽  
Jinzhong Wang ◽  
Mingtao Li ◽  
Xiuying Jiang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Zno Film ◽  
Nitrogen Doped ◽  
Metal Organic ◽  
Doped Zno ◽  
Organic Chemical Vapor Deposition

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

2013 ◽  
Vol 774-776 ◽  
pp. 964-967
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Co Doping ◽  
Structural And Electrical Properties ◽  
Doped Zno ◽  
Cu Ions ◽  
Co Doped

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.

Doping efficiency, optical and electrical properties of nitrogen-doped ZnO films

2011 ◽  
Vol 109 (9) ◽  
pp. 093518 ◽  
Author(s):  
W. W. Liu ◽  
B. Yao ◽  
Z. Z. Zhang ◽  
Y. F. Li ◽  
B. H. Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Nitrogen Doped ◽  
Doped Zno

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

2012 ◽  
Vol 1494 ◽  
pp. 133-138 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Zno Film ◽  
Al Content ◽  
Heavily Doped ◽  
Doped Zno

ABSTRACTIn this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

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