Vertical channel structure strategy in competing supply chains under third party’s extended warranties based on inverse demand function

2020 ◽  
Author(s):  
Lei Zhang ◽  
Jianhua Ma
Keyword(s):  
Supply Chains ◽  
Demand Function ◽  
Vertical Channel ◽  
Channel Structure ◽  
Extended Warranties ◽  
Inverse Demand

scholarly journals Design of Extended Warranties in Supply Chains under Additive Demand

2011 ◽  
Vol 21 (4) ◽  
pp. 730-746 ◽  
Author(s):  
Kunpeng Li ◽  
Suman Mallik ◽  
Dilip Chhajed
Keyword(s):  
Supply Chains ◽  
Extended Warranties

scholarly journals Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

2020 ◽  
Author(s):  
Tian-Ling Ren ◽  
Fan Wu ◽  
Yang Shen ◽  
He Tian ◽  
Jie Ren ◽  
...  
Keyword(s):  
Side Wall ◽  
Vertical Channel ◽  
Chemical Vapor ◽  
Channel Length ◽  
Atomic Level ◽  
Channel Structure ◽  
Gate Length ◽  
Large Area ◽  
Gate Control ◽  
Chemical Vapor Deposition Graphene

Abstract Despite 55 years of efforts into short gate length transistors following the Moore’s law, the gate length below 1 nm has not been realized. Here, we demonstrated a side-wall monolayer MoS2 transistors with ultimate 0.34 nm gate length using the edge of graphene as gate electrode. Moreover, large area of chemical vapor deposition graphene and MoS2 are used for 2-inch wafer production. These ultrashort devices show excellent ON/OFF current ratio of 2 × 105. Simulation results indicate that the MoS2 side-wall effective channel length approaches 0.34 nm in the ON state. This graphene edge gate combined with MoS2 vertical channel structure provides an efficient gate control ability and enables the physical gate length scaling down to atomic level, which shows great potential to build next generation electronics.

scholarly journals Channel Structure Strategies of Supply Chains with Varying Green Cost and Governmental Interventions

2019 ◽  
Vol 12 (1) ◽  
pp. 113
Author(s):  
Deyan Yang ◽  
Jinyong Wang ◽  
Dongping Song
Keyword(s):  
Supply Chain ◽  
Supply Chains ◽  
Green Manufacturing ◽  
Channel Structure ◽  
Green Supply Chain ◽  
Manufacturing Cost ◽  
Retail Prices ◽  
Governmental Intervention ◽  
Demand Sensitivity ◽  
The Impact

Environmental concerns make enterprises pay more attention to green manufacturing. The emerging green supply chain inevitably will compete with the traditional supply chain. In order to evaluate the competitiveness of supply chains and the impact on channel structure strategy, we develop four game models for two competing supply chains according to their channel structure strategies. Green marginal manufacturing cost, demand sensitivity of green level, and governmental interventions are considered. We study how retail prices, green levels, and profits are influenced by channel structure choice and governmental interventions. Analytical results indicate that the substitutability of products affects channel structure strategy. When the substitutability of products is relatively low, centralization–centralization is the unique Nash equilibrium. However, when the substitutability of products is relatively high, both centralization–centralization and decentralization–decentralization are the Nash equilibriums. Centralization–centralization is a prisoner dilemma, while decentralization–decentralization can make the green supply chain achieve optimal profit. Then, the green marginal manufacturing cost and demand sensitivities of the green level play important but different roles in channel structure strategy of the competing supply chains. Further, whether Nash equilibriums are the optimal strategy depends on governmental intervention. Relatively severe governmental intervention might realize a relatively higher green level, but may not always achieve the lowest retail price for the green supply chain. However, a relatively moderate governmental intervention might achieve a relatively lower green level.

An erosional structure in a layered dolerite dyke, West Greenland

1976 ◽  
Vol 113 (1) ◽  
pp. 77-82 ◽  
Author(s):  
H. R. Williams
Keyword(s):  
Water Vapour ◽  
Vapour Pressure ◽  
Vertical Channel ◽  
Channel Structure ◽  
Water Vapour Pressure ◽  
West Greenland ◽  
Dolerite Dyke

SummaryA vertical channel structure within a layered dolerite dyke resulted from differential magmatic flow. Layering in both dyke and channel is formed of more feldspathic dolerite attributed to fluctuations in water vapour pressure and supercooling during crystallization.

100-nm Channel Length a-Si:H Vertical Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Isaac Chan ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Vertical Channel ◽  
Channel Length ◽  
Channel Structure ◽  
Large Area ◽  
Short Channel ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Channel Effects

AbstractThis paper reports on hydrogenated amorphous silicon (a-Si:H) vertical thin film transistors (VTFTs) with channel length of 100 nm, using conventional planar TFT processing technology. The device has a fully self-aligned vertical channel structure, which is highly insensitive to the non-uniformity of reactive ion etching (RIE). Therefore, the VTFT process is very suitable for large-area electronics. Presently, we can demonstrate VTFTs with remarkable ON/OFF current ratio of more than 108, low leakage current down to 1 fA, and good subthreshold slope of 0.8 V/dec at Vd = 1.5 V. The impacts of contemporary device issues, such as short-channel effects and contact resistance, on the performance of short-channel VTFTs and suggested avenues for improvement are discussed.

Decentralization versus coordination in competing supply chains under retailers’ extended warranties

2018 ◽  
Vol 275 (2) ◽  
pp. 485-510 ◽  
Author(s):  
Jianhua Ma ◽  
Xingzheng Ai ◽  
Wen Yang ◽  
Yanchun Pan
Keyword(s):  
Supply Chains ◽  
Extended Warranties

Effect of T-Shaped Micro-Channel Structure Dimension on Formation of Micro-Liquid-Columns Formed by Vertical-Shear-Flow

2014 ◽  
Vol 945-949 ◽  
pp. 998-1002
Author(s):  
Zhi Xin Wang ◽  
Zhe Li ◽  
Heng Zhi Cai ◽  
Ya Jun Zhang ◽  
Jian Zhuang
Keyword(s):  
Shear Flow ◽  
Fluid Model ◽  
Phase Interface ◽  
Vertical Channel ◽  
Continuous Phase ◽  
Main Channel ◽  
Channel Structure ◽  
Vertical Shear ◽  
Width Ratio ◽  
Micro Channel

Effects of T-shaped micro-channel structure sizes on the formation of micro-liquid column formed by vertical-shear-flow were studied. The method of CFD based on VOF (Volume of Fluid) model was used in the computation. H2O and C5H3 were used as continuous-phase and as dispersed-phase. Interface-tracking method was used to get data of the two phases. The size parameters include crossing angle (∠β), width ratio of vertical channel and main channel (W2/W1), depth ratio of vertical channel and main channel (D2/D1), depth-width ratio of main channel (D1/W1). The above parameters affect the forming time of micro-liquid columns, the order of importance is D2/D1,∠β, D1/W1, W2/W1; And for the length, the order is∠β, D2/D1, D1/W1, W2/W1. For the shortest forming time, the optimized parameters of ∠β, D2/D1, D1/W1 and W2/W1 are 90°, 1.00, 1.00 and 1.60. To get the shortest micro-liquid columns, the optimized parameters of ∠β, D2/D1, D1/W1 and W2/W1 are 60°, 1.00, 1.00 and 1.60.

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