scholarly journals Design and analysis of novel Ge-GeTe PN junction for photovoltaics

Author(s):  
Andrew M. Jones ◽  
Ronald A. Coutu ◽  
Robert A. Lake
Keyword(s):  
Author(s):  
N. Wakai ◽  
M. TsuTsumi ◽  
T. Setoya

Abstract Mechanism of destruction caused by electrostatic discharge of PN junction was examined from two viewpoints; classification of destruction mode with consideration to destructive energy density, and comparison of destruction shape. Destructive energy density of PN junction was calculated based on Speakman model, and destruction mode was classified by Wunsch-Bell plot. As a result of Wunsch-Bell plot, electric discharge which occur at low resistance, for example machine model (MM: C∙R = 200pF ∙ 0Ω), resulted in adiabatic destruction that does not involve thermal diffusion. With electric discharge at high resistance, for example human body model (HBM: C∙R = 100pF ∙ 1500Ω), excessive destruction in intermediate region that involves thermal diffusion, and depending on the device, destruction at equilibrium region were proven to be reproducible. In case of MM, (adiabatic region destruction) destruction was confirmed in a wide extent of the joint part, but in case of HBM (intermediate region destruction) destruction was confirmed near the center of the joint part. From this fact, it was found that by verifying the places of destruction and their shapes, although in special cases, it is possible to know the destruction mode when destruction occurs.


2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.


2021 ◽  
Vol 292 ◽  
pp. 120160
Author(s):  
Ye Zeng ◽  
Zhen Cao ◽  
Jizhang Liao ◽  
Hanfeng Liang ◽  
Binbin Wei ◽  
...  
Keyword(s):  

2021 ◽  
Vol 135 ◽  
pp. 106093
Author(s):  
Yusuke Kuboki ◽  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Hiroshige Matsumoto ◽  
Kungen Teii ◽  
...  

Author(s):  
N. Rouger

Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.


2007 ◽  
Vol 556-557 ◽  
pp. 733-736 ◽  
Author(s):  
S. Takenami ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki

Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by a Cl2-O2 thermal etching method. The etching rate of 4H-SiC (000-1) C face was 10 times faster than that of (0001) Si face, and the etching rate at 910oC was about 18μm/h. The etched surface was rather smooth, and the sidewall of the mesa was inclined to the off-axis substrate. Taking into account the off angle of about 8o toward [11-20] off direction, the angles of the sidewalls were 52-56o for the <1-100> and 55-57o for the <11-20> directions from the crystallographically accurate (000-1) C face. Epitaxial pn junction diodes with the sloped sidewalls structure were fabricated, which had good electrical properties.


2004 ◽  
Vol 43 (3) ◽  
pp. 904-908 ◽  
Author(s):  
Takasumi Ohyanagi ◽  
Toshiyuki Ohno ◽  
Atsuo Watanabe

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