Investigation of the Reliability of the Interconnection between Metal Electrode and Silicon Anchor in Silicon-on-Glass Process

Author(s):  
Mengxia Liu ◽  
Xianshan Dong ◽  
Jian Cui ◽  
Qiancheng Zhao
2020 ◽  
Author(s):  
Mitsunori Kitta

This manuscript propose the operando detection technique of the physical properties change of electrolyte during Li-metal battery operation.The physical properties of electrolyte solution such as viscosity (η) and mass densities (ρ) highly affect the feature of electrochemical Li-metal deposition on the Li-metal electrode surface. Therefore, the operando technique for detection these properties change near the electrode surface is highly needed to investigate the true reaction of Li-metal electrode. Here, this study proved that one of the atomic force microscopy based analysis, energy dissipation analysis of cantilever during force curve motion, was really promising for the direct investigation of that. The solution drag of electrolyte, which is controlled by the physical properties, is directly concern the energy dissipation of cantilever motion. In the experiment, increasing the energy dissipation was really observed during the Li-metal dissolution (discharge) reaction, understanding as the increment of η and ρ of electrolyte via increasing of Li-ion concentration. Further, the dissipation energy change was well synchronized to the charge-discharge reaction of Li-metal electrode.This study is the first report for direct observation of the physical properties change of electrolyte on Li-metal electrode reaction, and proposed technique should be widely interesting to the basic interfacial electrochemistry, fundamental researches of solid-liquid interface, as well as the battery researches.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Bing Han ◽  
Yucheng Zou ◽  
Zhen Zhang ◽  
Xuming Yang ◽  
Xiaobo Shi ◽  
...  

AbstractCryogenic transmission electron microscopy (cryo-TEM) is a valuable tool recently proposed to investigate battery electrodes. Despite being employed for Li-based battery materials, cryo-TEM measurements for Na-based electrochemical energy storage systems are not commonly reported. In particular, elucidating the chemical and morphological behavior of the Na-metal electrode in contact with a non-aqueous liquid electrolyte solution could provide useful insights that may lead to a better understanding of metal cells during operation. Here, using cryo-TEM, we investigate the effect of fluoroethylene carbonate (FEC) additive on the solid electrolyte interphase (SEI) structure of a Na-metal electrode. Without FEC, the NaPF6-containing carbonate-based electrolyte reacts with the metal electrode to produce an unstable SEI, rich in Na2CO3 and Na3PO4, which constantly consumes the sodium reservoir of the cell during cycling. When FEC is used, the Na-metal electrode forms a multilayer SEI structure comprising an outer NaF-rich amorphous phase and an inner Na3PO4 phase. This layered structure stabilizes the SEI and prevents further reactions between the electrolyte and the Na metal.


Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3718-3727 ◽  
Author(s):  
Gyujeong Jeong ◽  
Donghwan Koo ◽  
Jihyung Seo ◽  
Seungon Jung ◽  
Yunseong Choi ◽  
...  

2006 ◽  
Vol 36 (7) ◽  
pp. 656-663 ◽  
Author(s):  
A P Mineev ◽  
S M Nefedov ◽  
Pavel P Pashinin

2018 ◽  
Vol 6 (5) ◽  
pp. 972-979 ◽  
Author(s):  
Tae-Yeon Hwang ◽  
Yomin Choi ◽  
YoSeb Song ◽  
Nu Si A. Eom ◽  
Seil Kim ◽  
...  

Monodispersed nano Pt catalyzed linear dense assembly of SWCNTs bundles on a noble multi-layered electrode system for cost-effective hydrogen sensor.


2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.


1999 ◽  
Vol 567 ◽  
Author(s):  
M.C. Gilmer ◽  
T-Y Luo ◽  
H.R. Huff ◽  
M.D. Jackson ◽  
S. Kim ◽  
...  

ABSTRACTA design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics. The high-K dielectrics were annealed in 100% or 10% O2 for different times and temperatures in conjunction with a previously prepared NH3 nitrided or 14N implanted silicon surface. Five metal electrode configurations—Ta, TaN, W, WN and TiN—were concurrently examined. Three additional silicon surface configurations were explored in conjunction with a more in-depth set of time and temperature anneals for Ta2O5. Electrical characterization of capacitors fabricated with the above high-K gate dielectrics, as well as SIMS and TEM analysis, indicate that the post high-K deposition annealing temperature was the most significant variable impacting the leakage current density, although there was minimal influence on the capacitance. Further studies are required, however, to clarify the physical mechanisms underlying the electrical data presented.


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