Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment

2017 ◽  
Author(s):  
Farzan Gity ◽  
Lida Ansari ◽  
Scott Monaghan ◽  
Gioele Mirabelli ◽  
Pasqualino Torchia ◽  
...  
Keyword(s):  
Thin Films ◽  
Conversion Process ◽  
Ex Situ ◽  
Plasma Doping ◽  
Process Simulations

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Refractive Index Tailoring of Poly(methylmethacrylate) Thin Films by Embedding Silver Nanoparticles

2012 ◽  
Vol 585 ◽  
pp. 134-138 ◽  
Author(s):  
Alisha Goyal ◽  
Jyoti Rozra ◽  
Isha Saini ◽  
Pawan K. Sharma ◽  
Annu Sharma
Keyword(s):  
Thin Films ◽  
Silver Nanoparticles ◽  
Refractive Index ◽  
Band Gap ◽  
Ag Nanoparticles ◽  
Nanocomposite Films ◽  
Ex Situ ◽  
Plasmon Resonance Peak ◽  
Pmma Matrix ◽  
Vis Spectroscopy

Nanocomposite films of Poly (methylmethacrylate) with different concentration of silver nanoparticles were prepared by ex-situ method. Firstly, silver nanoparticles were obtained by reducing the aqueous solution of silver nitrate with sodium borohydride then Ag-PMMA films were prepared by mixing colloidal solution of silver nanoparticles with solution of polymer. Thin solid films were structurally characterized using UV-VIS spectroscopy and TEM. The appearance of surface plasmon resonance peak, characteristic of silver nanoparticles at 420 nm in UV-VIS absorption spectra of Ag-PMMA films confirms the formation of Ag-PMMA nanocomposite. TEM showed Ag nanoparticles of average size 8 nm embedded in PMMA matrix. Analysis of absorption and reflection data indicates towards the reduction in optical band gap and increase in refractive index of the resulting nanocomposite. The synthesized Ag-PMMA nanocomposite has been found to be more conducting than PMMA as ascertained using I-V studies. The decrease in band gap and increase in conductivity can be correlated due to the formation of localized electronic states in PMMA matrix due to insertion of Ag nanoparticles. The PMMA thin films with dispersed silver nanoparticles may be useful for nanophotonic devices.

scholarly journals Understanding the Conversion Process of Magnetron-Deposited Thin Films of Amorphous ReOx to Crystalline ReO3 upon Thermal Annealing

2020 ◽  
Vol 20 (9) ◽  
pp. 6147-6156
Author(s):  
Boris Polyakov ◽  
Edgars Butanovs ◽  
Andrejs Ogurcovs ◽  
Sergei Vlassov ◽  
Martins Zubkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Conversion Process

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Ex-situ fluorination of oxygen deficient YBa2Cu3Ox thin films deposited by laser ablation on (100) SrTiO3 substrates

1996 ◽  
Vol 98 (6) ◽  
pp. 501-505 ◽  
Author(s):  
Philippe Massiot ◽  
Christiane Perrin ◽  
Maryline Guilloux-Viry ◽  
Jean-Claude Jegaden ◽  
André Perrin ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ex Situ

Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strain Relaxation ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

Ex-situ AlN seed layer for (0001)-textured Al0.85Sc0.15N thin films grown on SiO2 substrates for shear mode resonators

2017 ◽  
Author(s):  
Mohammad Fazel Parsapour Kolour ◽  
Cosmin Sandu ◽  
Vladimir Pashchenko ◽  
Stefan Mertin ◽  
Nicolas Kurz ◽  
...  
Keyword(s):  
Thin Films ◽  
Seed Layer ◽  
Ex Situ ◽  
Shear Mode
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