Design of low phase noise K-band Voltage-Controlled Oscillator using 180 nm CMOS and integrated passive device technologies

2014 NORCHIP ◽  
2014 ◽  
Author(s):  
Muh-Dey Wei ◽  
Sheng-Fuh Chang ◽  
Renato Negra
2013 ◽  
Vol 22 (06) ◽  
pp. 1350040
Author(s):  
MEI-LING YEH ◽  
YAO-CHIAN LIN ◽  
CHUNG-CHENG CHANG

A new high figure-of-merit (FOM) and low-phase-noise 20.73-GHz voltage-controlled oscillator is designed for K-band applications in this paper. The capacitive feedback technique is used for the low-phase-noise VCO design. The VCO can be tuned from 20.817 GHz to 20.266 GHz. The measured phase noise is -115.57 dBc/Hz at 1 MHz offset from the carrier frequency. The corresponding FOM is calculated to be -190 dBc/Hz. The VCO is implemented with the TSMC 0.18 μm one-poly-six-metal 1.7 V mixed-signal/RF CMOS technology, and the chip size is 0.51 × 0.74 mm2.


Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1132 ◽  
Author(s):  
Zhe Chen ◽  
Ji-Xin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Fang Zhu

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2–5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.


Author(s):  
Shitesh Tiwari ◽  
Sumant Katiyal ◽  
Parag Parandkar

Voltage Controlled Oscillator (VCO) is an integral component of most of the receivers such as GSM, GPS etc. As name indicates, oscillation is controlled by varying the voltage at the capacitor of LC tank. By varying the voltage, VCO can generate variable frequency of oscillation. Different VCO Parameters are contrasted on the basis of phase noise, tuning range, power consumption and FOM. Out of these phase noise is dependent on quality factor, power consumption, oscillation frequency and current. So, design of LC VCO at low power, low phase noise can be obtained with low bias current at low voltage.  Nanosize transistors are also contributes towards low phase noise. This paper demonstrates the design of low phase noise LC VCO with 4.89 GHz tuning range from 7.33-11.22 GHz with center frequency at 7 GHz. The design uses 32nm technology with tuning voltage of 0-1.2 V. A very effective Phase noise of -114 dBc / Hz is obtained with FOM of -181 dBc/Hz. The proposed work has been compared with five peer LC VCO designs working at higher feature sizes and outcome of this performance comparison dictates that the proposed work working at better 32 nm technology outperformed amongst others in terms of achieving low Tuning voltage and moderate FoM, overshadowed by a little expense of power dissipation. 


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