A 24-Channel Digitizer and Digital Serial Interface ASIC for High-Speed Detector Instrumentation

Author(s):  
C.R. Grace ◽  
P. Denes ◽  
E. Fong ◽  
D. Gnani ◽  
T. Stezelberger
Keyword(s):  
2014 ◽  
Vol 986-987 ◽  
pp. 2078-2081
Author(s):  
Wei Wei ◽  
Fei Teng Zhang

Analysis the characteristics of the measured transmission signal of Mobile Industry Processor Interface (MIPI) Display Serial Interface Physical Layer (D-PHY) interface based on a project platform. Firstly, introduces the transmission characteristics and mutual conversion process of physical layer about high-speed and low power mode, and by the transmission signal measured a platform of high-speed mode, present the D-PHY transmission signal each test items and test point selection, make the phone run smoothly and screen display normally, this test analysis certain practicability and expansibility.


Author(s):  
Hyun-Kyu Jeon ◽  
Hye-Ran Kim ◽  
Jung-Min Choi ◽  
Ju-Pyo Hong ◽  
Yong-Suk Kim ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.


Author(s):  
Ram Ratnaker Reddy Bodha ◽  
Sahar Sarafi ◽  
Ajinkya Kale ◽  
Michael Koberle ◽  
Johannes Sturm

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