The engineering design and construction of an ultra-high resolution high-sensitivity preclinical PET/CT — MuPET

Author(s):  
Yuxuan Zhang ◽  
R Ramirez ◽  
Hongdi Li ◽  
Shitao Liu ◽  
Shaohui An ◽  
...  
2018 ◽  
Vol 60 (1) ◽  
pp. 142-149 ◽  
Author(s):  
Zheng Gu ◽  
Richard Taschereau ◽  
Nam T. Vu ◽  
David L. Prout ◽  
Robert W. Silverman ◽  
...  

2020 ◽  
Vol 65 (4) ◽  
pp. 045009 ◽  
Author(s):  
Zheng Gu ◽  
Richard Taschereau ◽  
Nam T Vu ◽  
David L Prout ◽  
Jason Lee ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
Sara Gargiulo ◽  
Adelaide Greco ◽  
Matteo Gramanzini ◽  
Maria Piera Petretta ◽  
Adele Ferro ◽  
...  

Different species have been used to reproduce myocardial infarction models but in the last years mice became the animals of choice for the analysis of several diseases, due to their short life cycle and the possibility of genetic manipulation. Many techniques are currently used for cardiovascular imaging in mice, including X-ray computed tomography (CT), high-resolution ultrasound, magnetic resonance imaging, and nuclear medicine procedures. Cardiac positron emission tomography (PET) allows to examine noninvasively, on a molecular level and with high sensitivity, regional changes in myocardial perfusion, metabolism, apoptosis, inflammation, and gene expression or to measure changes in anatomical and functional parameters in heart diseases. Currently hybrid PET/CT scanners for small laboratory animals are available, where CT adds high-resolution anatomical information. This paper reviews mouse models of myocardial infarction and discusses the applications of dedicated PET/CT systems technology, including animal preparation, anesthesia, radiotracers, and images postprocessing.


Author(s):  
Kazumichi Ogura ◽  
Michael M. Kersker

Backscattered electron (BE) images of GaAs/AlGaAs super lattice structures were observed with an ultra high resolution (UHR) SEM JSM-890 with an ultra high sensitivity BE detector. Three different types of super lattice structures of GaAs/AlGaAs were examined. Each GaAs/AlGaAs wafer was cleaved by a razor after it was heated for approximately 1 minute and its crosssectional plane was observed.First, a multi-layer structure of GaAs (100nm)/AlGaAs (lOOnm) where A1 content was successively changed from 0.4 to 0.03 was observed. Figures 1 (a) and (b) are BE images taken at an accelerating voltage of 15kV with an electron beam current of 20pA. Figure 1 (c) is a sketch of this multi-layer structure corresponding to the BE images. The various layers are clearly observed. The differences in A1 content between A1 0.35 Ga 0.65 As, A1 0.4 Ga 0.6 As, and A1 0.31 Ga 0.69 As were clearly observed in the contrast of the BE image.


2021 ◽  
pp. 1-7
Author(s):  
Yu Ji ◽  
Chunchun C. Shao ◽  
Yong Cui ◽  
Kai Cui ◽  
Guangrui R. Shao ◽  
...  

2006 ◽  
Vol 23 (9) ◽  
pp. 2415-2417
Author(s):  
Deng Lun-Hua ◽  
Gao Xiao-Ming ◽  
Cao Zhen-Song ◽  
Zhao Wei-Xiong ◽  
Zhang Wei-Jun

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