A new method to extract the resistive component of the metal oxide surge arrester leakage current

2008 ◽  
Author(s):  
Zulkurnain Abdul-Malek ◽  
Novizon ◽  
Aulia
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
New Method ◽  
Resistive Component

scholarly journals Circuit-based method for extracting the resistive leakage current of metal oxide surge arrester

2020 ◽  
Vol 9 (6) ◽  
pp. 2213-2221 ◽  
Author(s):  
Amir Hesam Khavari ◽  
Abdullah Munir ◽  
Zulkurnain Abdul- Malek
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Extraction Method ◽  
Maximum Error ◽  
Condition Assessment ◽  
Experimental Results ◽  
Equivalent Model ◽  
Surge Arresters ◽  
Total Leakage ◽  
Resistive Component

Resistive leakage current based condition assessment of metal oxide surge arrester (MOSA) is one of the most extensively employed technique to monitor its degradation. An extraction method is customarily required to extract the resistive component from the total leakage current. The existing methods to extract the resistive current are complex and less accurate. Therefore, this paper describes a simple and accurate circuit-based method to extract the resistive current using equivalent model and measured leakage current of the arrester. The accuracy of the proposed method is validated through experimental results on ABB’s 120 kV surge arrester, EMTP and QuickField software simulations. The performance of the method is also analyzed and verified experimentally on 72, 180 and 240 kV rated ABB’s surge arresters. The obtained results of resistive leakage current have shown the maximum error of 0.001%. Simple and easier computational steps with higher accuracy are the key benefits of the proposed technique.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

scholarly journals Extracting the Resistive Current Component from a Surge Arrester’s Leakage Current without Voltage Reference

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1257
Author(s):  
Vid Vončina ◽  
Jože Pihler ◽  
Miro Milanovič
Keyword(s):  
Leakage Current ◽  
Data Transfer ◽  
Electronic Device ◽  
Theoretical Background ◽  
Voltage Reference ◽  
Current Component ◽  
Surge Arresters ◽  
Transfer Unit ◽  
Control Centre ◽  
Resistive Component

This article presents the development of the theoretical background and the design of an electronic device for monitoring the condition of a gapless Metal Oxide Surge Arrester (MOSA). The device is intended to be used online. Because of the inaccessibility and possible remote location of most surge arresters, it is equipped with a communication system, allowing for the device to convey the measurement of the surge arrester characteristics under any conditions. It is possible to determine the condition of the MOSA by gathering measurements of the surge arrester’s resistive component of leakage current. The leakage current information is sent via data transfer unit to a server and, after interpretation, will be forwarded to the authorised personnel through the surge arrester control centre.

A New Method of Synthesis of Nanosized Metal Oxide Powders

2018 ◽  
Vol 482 (1) ◽  
pp. 201-203 ◽  
Author(s):  
G. P. Panasyuk ◽  
E. A. Semenov ◽  
I. V. Kozerozhets ◽  
Kh. E. Yorov ◽  
L. A. Azarova ◽  
...  
Keyword(s):  
Metal Oxide ◽  
New Method ◽  
Oxide Powders

scholarly journals 102 The proposal of method reducing the leakage current in an elevator : New method of the passive filter

2009 ◽  
Vol 2008 (0) ◽  
pp. 23-26 ◽  
Author(s):  
Junji TAKEDA ◽  
Kazuo SHIMANE ◽  
Takayoshi TAKEDA ◽  
Hiroaki MATSUOKA ◽  
Hiroshi MOCHIKAWA ◽  
...  
Keyword(s):  
Leakage Current ◽  
New Method ◽  
Passive Filter

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

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