Implications of laser-doping parameters and contact opening size on contact resistivity

2018 ◽  
Author(s):  
Jonas D. Huyeng ◽  
Marco Ernst ◽  
Kean Chern Fong ◽  
Daniel Walter ◽  
Andrew Blakers
Keyword(s):  
Contact Resistivity ◽  
Laser Doping

scholarly journals Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

2020 ◽  
Vol 10 (13) ◽  
pp. 4554
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Jae Joon Jang ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Laser Fluence ◽  
Contact Resistivity ◽  
Process Conditions ◽  
Laser Doping ◽  
Selective Emitter ◽  
Melting Phenomenon ◽  
Irregular Structure ◽  
Si Solar Cell ◽  
Additional Processing ◽  
By Products

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Reduction in contact resistivity of Ag thick-film conductor on SiN x -coated Si wafer for solar cell using lead tellurite glass frit

2020 ◽  
Vol 59 (9) ◽  
pp. 090908
Author(s):  
Yusuke Tachibana ◽  
Akifumi Matsuda ◽  
Mamoru Yoshimoto
Keyword(s):  
Solar Cell ◽  
Thick Film ◽  
Tellurite Glass ◽  
Glass Frit ◽  
Contact Resistivity ◽  
Film Conductor ◽  
Si Wafer

Contact resistivity of IR lamp alloyed Au-Ge metallisation on GaAs

1984 ◽  
Vol 20 (22) ◽  
pp. 944 ◽  
Author(s):  
S.S. Gill ◽  
J.R. Dawsey ◽  
A.G. Cullis
Keyword(s):  
Contact Resistivity

Mo-Fe/NbFeSb Thermoelectric Junctions: Anti-Thermal Aging Interface and Low Contact Resistivity

2021 ◽  
Vol 13 (6) ◽  
pp. 7317-7323
Author(s):  
Zhenyi Wang ◽  
Chenguang Fu ◽  
Kaiyang Xia ◽  
Feng Liu ◽  
Xinbing Zhao ◽  
...  
Keyword(s):  
Thermal Aging ◽  
Contact Resistivity

Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1/TiN S/D Contact on Al0.2Ga0.8N/ AlN/GaN Structure without Barrier Recess

2021 ◽  
Author(s):  
Yang Jiang ◽  
Zepeng Qiao ◽  
Fangzhou Du ◽  
Gaiying Yang ◽  
Mengya Fan ◽  
...  
Keyword(s):  
Contact Resistivity

Development of low contact resistivity electrode for HTSC films

2004 ◽  
Vol 412-414 ◽  
pp. 1060-1065 ◽  
Author(s):  
Atsushi Inoue ◽  
Masahiko Kai ◽  
Saburo Hoshi ◽  
Teruo Izumi ◽  
Yuh Shiohara ◽  
...  
Keyword(s):  
Contact Resistivity

Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Navid S. Fatemi ◽  
Victor G. Weizer
Keyword(s):  
Deposition Process ◽  
Atomic Ratio ◽  
Contact Resistivity ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Process Use ◽  
Fold Reduction ◽  
Specific Contact ◽  
Order Of Magnitude ◽  
First Time

ABSTRACTNear-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in pc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with pc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

Ti/Al- GaN Reaction Mechanism Forming Low Contact Resistivity

2002 ◽  
Vol 743 ◽  
Author(s):  
Yoshimichi Fukasawa ◽  
Tomonori Nakamura ◽  
Tohru Nakamura
Keyword(s):  
Electron Beam ◽  
Reaction Mechanism ◽  
Carrier Concentration ◽  
Ohmic Contacts ◽  
Rutherford Backscattering ◽  
Contact Resistivity ◽  
Ti Alloy ◽  
Sapphire Substrates ◽  
Metal Thickness ◽  
Alloy Metal

ABSTRACTThe mechanism of Ti/Al reaction to n-GaN was studied to form ohmic contacts with low contact resistivity. N-GaN layers with a carrier concentration of 2.17×1018 cm−3 were deposited on sapphire substrates. Ti/Al metals were deposited by conventional electron-beam techniques. Contact resistivity decreased as the Ti thickness increased, and increased as the Al thickness increased. The lowest contact resistivity was measured at 1.20 × 10−6 Ωcm2 for 80 nm Ti /100 nm Al. After annealing at 900 °C, Al/AlTi/TiN layers on GaN were formed and Al Ti alloy thickness decreased as Ti thickness increased, from 1.5 MeV Rutherford Backscattering Spectroscopy(RBS) measurement. It was found that the contact resistivity was reduced as alloy metal thickness into GaN was increased.

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