Effect of Light Irradiation on Carrier Mobility of n- and p-type Si substrates for Solar Cell Application

Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate. Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.

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Structural study of p-type μc-Si layer for solar cell application

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00803-0 ◽

2000 ◽

Vol 266-269 ◽

pp. 171-175 ◽

Cited By ~ 8

Author(s):

Toshiaki Sasaki ◽

Shinji Fujikake ◽

Katsuya Tabuchi ◽

Takashi Yoshida ◽

Toshio Hama ◽

...

Keyword(s):

Solar Cell ◽

Structural Study ◽

Solar Cell Application ◽

P Type

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Effect of light irradiation during potential-induced degradation tests for p-type crystalline Si photovoltaic modules

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.08rg13 ◽

2018 ◽

Vol 57 (8S3) ◽

pp. 08RG13 ◽

Cited By ~ 3

Author(s):

Atsushi Masuda ◽

Yukiko Hara

Keyword(s):

Light Irradiation ◽

Photovoltaic Modules ◽

Degradation Tests ◽

P Type ◽

Effect Of Light

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Study on the deposition of amorphous silicon and ito thin films for heterojunction solar cell application

Science and Technology Development Journal ◽

10.32508/stdj.v16i1.1425 ◽

2013 ◽

Vol 16 (1) ◽

pp. 101-111

Author(s):

Chien Mau Dang ◽

Tung Thanh Bui ◽

Hung Thanh Le ◽

Vu Ngoc Hoang ◽

Linh Ngoc Tran ◽

...

Keyword(s):

Solar Cell ◽

Amorphous Silicon ◽

Sheet Resistance ◽

Indium Tin Oxide ◽

High Efficiency ◽

Cell Structure ◽

Chemical Vapor ◽

Solar Cell Application ◽

Ito Thin Films ◽

P Type

In the heterojunction with intrinsic thin-layer (HIT) solar cell structure studied in this work, an intrinsic amorphous silicon (a-Si) layer followed by a n-type amorphous silicon was deposited on a p-type Czochralski (CZ) monocrystalline silicon (c-Si) wafer by plasma enhanced chemical vapor deposition (PECVD) method to form an heterojunction device. Then, indium tin oxide (ITO) layer was formed by DC magnetron sputtering as the top electrode and the anti-reflection coating layer. In order to obtain the high efficiency heterojunction structure, two important aspects were focused: improving the passivation properties of a-Si/c-Si heterojunction and reducing the light absorption and the sheet resistance of ITO layers. It was found that hydrogenated amorphous silicon (a- Si:H) layers can be grown at low substrate temperature, about 200°C. High-quality ITO layers with the sheet resistance less than 15 ohm/sq and the transmittance of about 70%, can be deposited at relatively low DC power (50W).

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