Characterization of ESD stress effects on SiC MOSFETs using photon emission spectral signatures

2017 ◽  
Author(s):  
Niemat Moultif ◽  
Eric Joubert ◽  
Mohamed Masmoudi ◽  
Olivier Latry
Keyword(s):  
Photon Emission ◽  
Spectral Signatures ◽  
Stress Effects

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

2017 ◽  
Vol 76-77 ◽  
pp. 243-248
Author(s):  
N. Moultif ◽  
E. Joubert ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Photon Emission ◽  
Spectral Signatures ◽  
Stress Effects

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

2009 ◽  
Vol 49 (9-11) ◽  
pp. 1211-1215 ◽  
Author(s):  
A. Glowacki ◽  
P. Laskowski ◽  
C. Boit ◽  
Ponky Ivo ◽  
Eldad Bahat-Treidel ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Photon Emission ◽  
Spectral Signatures ◽  
Stress Degradation ◽  
Gan Hemts

Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis

2008 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Richard Lossy ◽  
Joachim Würfl
Keyword(s):  
Reliability Analysis ◽  
Gate Voltage ◽  
Near Infrared ◽  
Photon Emission ◽  
Electrical Characterization ◽  
Spectral Signatures ◽  
Operating Modes ◽  
Gan Hemt ◽  
Spectrally Resolved ◽  
Performance Variations

Abstract Non-degraded and degraded AlGaN/GaN HEMT devices have been characterized electrically and investigated in various operating modes using integral and spectrally resolved photon emission (PE). In degraded devices the PE dependence on the gate voltage differs from the non-degraded devices. Various types of dependencies on the gate voltage have been identified when investigating local degradation sites. PE spectroscopy was performed at various bias conditions. For both devices broad spectra have been obtained in a wavelength regime from visible to near-infrared, including local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum.

Two-dimensional photon counting imaging and spatiotemporal characterization of ultraweak photon emission from a rat’s brain in vivo

1999 ◽  
Vol 93 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Masaki Kobayashi ◽  
Motohiro Takeda ◽  
Ken-Ichi Ito ◽  
Hiroshi Kato ◽  
Humio Inaba
Keyword(s):  
Photon Emission ◽  
Photon Counting ◽  
Two Dimensional

A Detailed Evaluation of the Effects of Bulk Residual Stress on Fatigue in Aluminum

2014 ◽  
Vol 891-892 ◽  
pp. 1205-1211 ◽  
Author(s):  
Dale L. Ball ◽  
Mark A. James ◽  
Robert J. Bucci ◽  
John D. Watton ◽  
Adrian T. DeWald ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Effective Utilization ◽  
Stress Effects ◽  
The Past ◽  
Property Data ◽  
Design Cycle ◽  
Detailed Evaluation ◽  
The Impact

The fully effective utilization of large aluminum forgings in aerospace structures has been hampered in the past by inadequate understanding of, and sometimes inaccurate representation of, bulk residual stresses and their impact on both design mechanical properties and structural performance. In recent years, significant advances in both computational and experimental methods have led to vastly improved characterization of residual stresses. As a result, new design approaches which require the extraction of residual stress effects from material property data and the formal inclusion of residual stresses in the design analysis, have been enabled. In particular, the impact of residual stresses on durability and damage tolerance can now be assessed, and more importantly, accounted for at the beginning of the design cycle.

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