Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis

2008 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Richard Lossy ◽  
Joachim Würfl
Keyword(s):  
Reliability Analysis ◽  
Gate Voltage ◽  
Near Infrared ◽  
Photon Emission ◽  
Electrical Characterization ◽  
Spectral Signatures ◽  
Operating Modes ◽  
Gan Hemt ◽  
Spectrally Resolved ◽  
Performance Variations

Abstract Non-degraded and degraded AlGaN/GaN HEMT devices have been characterized electrically and investigated in various operating modes using integral and spectrally resolved photon emission (PE). In degraded devices the PE dependence on the gate voltage differs from the non-degraded devices. Various types of dependencies on the gate voltage have been identified when investigating local degradation sites. PE spectroscopy was performed at various bias conditions. For both devices broad spectra have been obtained in a wavelength regime from visible to near-infrared, including local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum.

scholarly journals Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

2017 ◽  
Vol 81 ◽  
pp. 69-78 ◽  
Author(s):  
Niemat Moultif ◽  
Alexis Divay ◽  
Eric Joubert ◽  
Olivier Latry
Keyword(s):  
Photon Emission ◽  
Spectral Signatures ◽  
Gan Hemt

Photon Emission Spectra through Silicon of Various Thicknesses

2011 ◽  
Author(s):  
Arkadiusz Glowacki ◽  
Carlo Pagano ◽  
Christian Boit ◽  
Yoshiyuki Yokoyama ◽  
Arkadiusz Jankowski ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Photon Emission ◽  
Emission Spectra ◽  
Substrate Material ◽  
Short Channel ◽  
Electron Hole ◽  
Infrared Spectral ◽  
Spectrally Resolved

Abstract In this work we present spectrally resolved photon emission microscopy (SPEM) measurements originating from short-channel MOSFETs acquired through the backside of the silicon substrate. Two commonly used detectors have been chosen for the detection of electroluminescence (EL) in the visible and near-infrared spectral regime, namely Si-CCD and InGaAs. As the backside photon emission (PE) inspection is strongly influenced by the absorption of light in a substrate material, the SPEM experiments have been carried out through thinned silicon layers as obtained by mechanical grinding and local focused-ion-beam (FIB) assisted Si material removal. Intrinsic Si absorption (generation of electron-hole pairs) and absorption on free carriers have been modeled to be able to calibrate experimental results and obtain devicerelated PE spectra. The results show no evidences of specific transitions and lead to a conclusion that photon emission from MOSFETs is fully electrical field related.

Integrated ESD Robustness through Device Analysis of Ultra-Small Low Voltage Power MOSFETs

2014 ◽  
Author(s):  
Ian Kearney ◽  
Hank Sung
Keyword(s):  
New Product Development ◽  
Silicon Oxide ◽  
Low Voltage ◽  
Photon Emission ◽  
Electrical Characterization ◽  
Power Mosfets ◽  
Low Leakage ◽  
A Cell ◽  
Thermographic Analysis ◽  
Voltage Spike

Abstract Low voltage power MOSFETs often integrate voltage spike protection and gate oxide ESD protection. The basic concept of complete-static protection for the power MOSFETs is the prevention of static build-up where possible and the quick, reliable removal of existing charges. The power MOSFET gate is equivalent to a low voltage low leakage capacitor. The capacitor plates are formed primarily by the silicon gate and source metallization. The capacitor dielectric is the silicon oxide gate insulation. Smaller devices have less capacitance and require less charge per volt and are therefore more susceptible to ESD than larger MOSFETs. A FemtoFETTM is an ultra-small, low on-resistance MOSFET transistor for space-constrained handheld applications, such as smartphones and tablets. An ESD event, for example, between a fingertip and the communication-port connectors of a cell phone or tablet may cause permanent system damage. Through electrical characterization and global isolation by active photon emission, the authors identify and distinguish ESD failures. Thermographic analysis provided additional insight enabling further separation of ESD failmodes. This paper emphasizes the role of failure analysis in new product development from the create phase through to product ramp. Coupled with device electrical simulation, the analysis observations led to further design enhancement.

WLCSP Laminate Removal Using NIR Laser

2018 ◽  
Author(s):  
Chun Haur Khoo
Keyword(s):  
Near Infrared ◽  
Laser Energy ◽  
Photon Emission ◽  
Mechanical Damage ◽  
Consumer Products ◽  
Fault Isolation ◽  
Wafer Level ◽  
Isolation Technique ◽  
Laminate Layer ◽  
Nir Laser

Abstract Driven by the cost reduction and miniaturization, Wafer Level Chip Scale Packaging (WLCSP) has experienced significant growth mainly driven by mobile consumer products. Depending on the customers or manufacturing needs, the bare silicon backside of the WLCSP may be covered with a backside laminate layer. In the failure analysis lab, in order to perform the die level backside fault isolation technique using Photon Emission Microscope (PEM) or Laser Signal Injection Microscope (LSIM), the backside laminate layer needs to be removed. Most of the time, this is done using the mechanical polishing method. This paper outlines the backside laminate removal method of WLCSP using a near infrared (NIR) laser that produces laser energy in the 1,064 nm range. This method significantly reduces the sample preparation time and also reduces the risk of mechanical damage as there is no application of mechanical force. This is an effective method for WLCSP mounted on a PCB board.

scholarly journals The slope of cerebral oxyhemoglobin oscillation is associated with vascular reserve capacity in large artery steno-occlusion

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tae Jung Kim ◽  
Jae-Myoung Kim ◽  
Soo-Hyun Park ◽  
Jong-Kwan Choi ◽  
Hyeon-Min Bae ◽  
...  
Keyword(s):  
Cerebral Artery ◽  
Near Infrared ◽  
Single Photon ◽  
Photon Emission ◽  
Emission Computed Tomography ◽  
Large Artery ◽  
Anterior Circulation ◽  
Functional Near Infrared Spectroscopy ◽  
Vascular Reserve ◽  
Photon Emission Computed Tomography

AbstractInadequate cerebral perfusion is a risk factor for cerebral ischemia in patients with large artery steno-occlusion. We investigated whether prefrontal oxyhemoglobin oscillation (ΔHbO2, 0.6–2 Hz) was associated with decreased vascular reserve in patients with steno-occlusion in the large anterior circulation arteries. Thirty-six patients with steno-occlusion in the anterior circulation arteries (anterior cerebral artery, middle cerebral artery, and internal carotid artery) were included and compared to thirty-six control subjects. Patients were categorized into two groups (deteriorated vascular reserve vs. preserved vascular reserve) based on the results of Diamox single- photon emission computed tomography imaging. HbO2 data were collected using functional near-infrared spectroscopy. The slope of ΔHbO2 and the ipsilateral/contralateral slope ratio of ΔHbO2 were analyzed. Among the included patients (n = 36), 25 (69.4%) had deteriorated vascular reserve. Patients with deteriorated vascular reserve had a significantly higher average slope of ΔHbO2 on the ipsilateral side (5.01 ± 2.14) and a higher ipsilateral/contralateral ratio (1.44 ± 0.62) compared to those with preserved vascular reserve (3.17 ± 1.36, P = 0.014; 0.93 ± 0.33, P = 0.016, respectively) or the controls (3.82 ± 1.69, P = 0.019; 0.94 ± 0.29, P = 0.001). The ipsilateral/contralateral ΔHbO2 ratio could be used as a surrogate for vascular reserve in patients with severe steno-occlusion in the anterior circulation arteries.

scholarly journals Endoglin/CD105-Based Imaging of Cancer and Cardiovascular Diseases: A Systematic Review

2021 ◽  
Vol 22 (9) ◽  
pp. 4804
Author(s):  
Vincent Q. Sier ◽  
Joost R. van der Vorst ◽  
Paul H. A. Quax ◽  
Margreet R. de Vries ◽  
Elham Zonoobi ◽  
...  
Keyword(s):  
Systematic Review ◽  
Cardiovascular Diseases ◽  
Near Infrared ◽  
Transforming Growth Factor ◽  
Single Photon ◽  
Imaging Modality ◽  
Photon Emission ◽  
Emission Computed Tomography ◽  
Nirf Imaging ◽  
Efficient Detection

Molecular imaging of pathologic lesions can improve efficient detection of cancer and cardiovascular diseases. A shared pathophysiological feature is angiogenesis, the formation of new blood vessels. Endoglin (CD105) is a coreceptor for ligands of the Transforming Growth Factor-β (TGF-β) family and is highly expressed on angiogenic endothelial cells. Therefore, endoglin-based imaging has been explored to visualize lesions of the aforementioned diseases. This systematic review highlights the progress in endoglin-based imaging of cancer, atherosclerosis, myocardial infarction, and aortic aneurysm, focusing on positron emission tomography (PET), single-photon emission computed tomography (SPECT), magnetic resonance imaging (MRI), near-infrared fluorescence (NIRF) imaging, and ultrasound imaging. PubMed was searched combining the following subjects and their respective synonyms or relevant subterms: “Endoglin”, “Imaging/Image-guided surgery”. In total, 59 papers were found eligible to be included: 58 reporting about preclinical animal or in vitro models and one ex vivo study in human organs. In addition to exact data extraction of imaging modality type, tumor or cardiovascular disease model, and tracer (class), outcomes were described via a narrative synthesis. Collectively, the data identify endoglin as a suitable target for intraoperative and diagnostic imaging of the neovasculature in tumors, whereas for cardiovascular diseases, the evidence remains scarce but promising.

scholarly journals Development of Calibration Models to Predict Mean Fibre Diameter in Llama (Lama glama) Fleeces with Near Infrared Spectroscopy

Animals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1998
Author(s):  
José Ignacio Amorena ◽  
Dolores María Eugenia Álvarez ◽  
Elvira Fernández-Ahumada
Keyword(s):  
Textile Industry ◽  
Near Infrared ◽  
Prediction Models ◽  
External Validation ◽  
Fibre Diameter ◽  
Near Infrared Reflectance ◽  
Screening Programs ◽  
Spectral Signatures ◽  
Calibration Models ◽  
Cross Validation Error

Llama fibre has the potential to become the most valuable textile resource in the Puna region of Argentina. In this study near infrared reflectance spectroscopy was evaluated to predict the mean fibre diameter in llama fleeces. Analyses between sets of carded and non-carded samples in combination with spectral preprocessing techniques were carried out and a total of 169 spectral signatures of llama samples in Vis and NIR ranges (400–2500 nm) were obtained. Spectral preprocessing consisted in wavelength selection (Vis–NIR, NIR and discrete ranges) and multiplicative and derivative pretreatments; spectra without pretreatments were also included, while modified partial least squares (M-PLS) regression was used to develop prediction models. Predictability was evaluated through R2: standard cross validation error (SECV), external validation error (SEV) and residual predictive value (RPD). A total of 54 calibration models were developed in which the best model (R2 = 0.67; SECV = 1.965; SEV = 2.235 and RPD = 1.91) was obtained in the Vis–NIR range applying the first derivative pretreatment. ANOVA analysis showed differences between carded and non-carded sets and the models obtained could be used in screening programs and contribute to valorisation of llama fibre and sustainable development of textile industry in the Puna territory of Catamarca. The data presented in this paper are a contribution to enhance the scarce information on this subject.

Diamond-Based Single-photon Emission in the Near Infrared

2006 ◽  
Author(s):  
E Wu ◽  
V. Jacques ◽  
F. Treussart ◽  
H. Zeng ◽  
P. Grangier ◽  
...  
Keyword(s):  
Near Infrared ◽  
Single Photon ◽  
Photon Emission ◽  
Single Photon Emission

scholarly journals Mobile Application Development for Spectral Signature of Weed Species in Rice Farming

2021 ◽  
Vol 29 (4) ◽  
Author(s):  
Nor Athirah Roslin ◽  
Nik Norasma Che’Ya ◽  
Nursyazyla Sulaiman ◽  
Lutfi Amir Nor Alahyadi ◽  
Mohd Razi Ismail
Keyword(s):  
Mobile Application ◽  
Near Infrared ◽  
Spectral Signature ◽  
Weed Species ◽  
Application Development ◽  
Spectral Signatures ◽  
Weed Infestation ◽  
Access Information ◽  
Master Builder ◽  
And Control

Weed infestation happens when there is intense competition between rice and weeds for light, nutrients and water. These conditions need to be monitored and controlled to lower the growth of weeds as they affected crops production. The characteristics of weeds and rice are challenging to differentiate macroscopically. However, information can be acquired using a spectral signature graph. Hence, this study emphasises using the spectral signature of weed species and rice in a rice field. The study aims to generate a spectral signature graph of weeds in rice fields and develop a mobile application for the spectral signature of weeds. Six weeds were identified in Ladang Merdeka using Fieldspec HandHeld 2 Spectroradiometer. All the spectral signatures were stored in a spectral database using Apps Master Builder, viewed using smartphones. The results from the spectral signature graph show that the jungle rice (Echinochloa spp.) has the highest near-infrared (NIR) reflectance. In contrast, the saromacca grass (Ischaemum rugosum) shows the lowest NIR reflectance. Then, the first derivative (FD) analysis was run to visualise the separation of each species, and the 710 nm to 750 nm region shows the highest separation. It shows that the weed species can be identified using spectral signature by FD analysis with accurate separation. The mobile application was developed to provide information about the weeds and control methods to the users. Users can access information regarding weeds and take action based on the recommendations of the mobile application.

Novel routes to electromagnetic enhancement and its characterisation in surface- and tip-enhanced Raman scattering

2017 ◽  
Vol 205 ◽  
pp. 121-148 ◽  
Author(s):  
P. Dawson ◽  
D. Frey ◽  
V. Kalathingal ◽  
R. Mehfuz ◽  
J. Mitra
Keyword(s):  
Raman Scattering ◽  
Near Infrared ◽  
Dielectric Material ◽  
Photon Emission ◽  
Electromagnetic Enhancement ◽  
Raman Enhancement ◽  
Surface Enhanced Raman ◽  
Tunnelling Microscopy ◽  
Enhanced Raman Scattering ◽  
Simple Systems

Quantitative understanding of the electromagnetic component in enhanced Raman spectroscopy is often difficult to achieve on account of the complex substrate structures utilised. We therefore turn to two structurally simple systems amenable to detailed modelling. The first is tip-enhanced Raman scattering under electron scanning tunnelling microscopy control (STM-TERS) where, appealing to understanding developed in the context of photon emission from STM, it is argued that the localised surface plasmon modes driving the Raman enhancement exist in the visible and near-infrared regime only by virtue of significant modification to the optical properties of the tip and sample metals (gold here). This is due to the strong dc field-induced (∼109V m−1) non-linear corrections to the dielectric function of goldviathe third order susceptibility term in the polarisation. Also, sub-5 nm spatial resolution is shown in the modelling. Secondly, we suggest a novel deployment of hybrid plasmonic waveguide modes in surface enhanced Raman scattering (HPWG-SERS). This delivers strong confinement of electromagnetic energy in a ∼10 nm oxide ‘gap’ between a high-index dielectric material of nanoscale width (a GaAs nanorod and a 100 nm Si slab are considered here) and a metal, yielding a monotonic variation in the Raman enhancement factor as a function of wavelength with no long-wavelength cut-off, both features that contrast with STM-TERS.

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