High-current characterization of dual-damascene copper interconnects in SiO/sub 2/- and low-k interlevel dielectrics for advanced CMOS semiconductor technologies

Author(s):  
S. Voldman ◽  
R. Gauthier ◽  
K. Morrisseau ◽  
M. Hargrove ◽  
V. McGahay ◽  
...  
2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.


Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.


2020 ◽  
Vol 4 (7) ◽  
Author(s):  
Travis D. Frazer ◽  
Joshua L. Knobloch ◽  
Jorge N. Hernández-Charpak ◽  
Kathleen M. Hoogeboom-Pot ◽  
Damiano Nardi ◽  
...  

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