Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing

2007 ◽  
Author(s):  
F.A. Cavarsan ◽  
A. Toma ◽  
J. Godoy Fo ◽  
J.A. Diniz ◽  
I. Doi
Keyword(s):  
Thermal Oxidation ◽  
Silicon Oxide ◽  
Mos Capacitors ◽  
Rapid Thermal Oxidation

Comparative Studies of Gate Oxides Using Thermal, Stacked Gate, and Rapid Thermal Oxidation

1990 ◽  
Vol 182 ◽  
Author(s):  
S. Chittipeddi ◽  
P. K. Roy ◽  
V. C. Kannan ◽  
R. Singh ◽  
C. M. Dziuba
Keyword(s):  
Thermal Oxidation ◽  
Defect Density ◽  
Gate Oxide ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Rapid Thermal Oxidation ◽  
Transmission Electron ◽  
Lattice Images ◽  
Flatband Voltage

AbstractIn this paper we report on the quality of gate oxides obtained using three different oxidation techniques, namely thermal oxidation, rapid thermal oxidation and stacked gate oxidation. We report on the oxide thicknesses, the flatband voltage, threshold voltage, and QSS/Q values for MOS capacitors fabricated using these three techniques. We also fabricated MOSFET's using thermal oxides and stacked gate oxides, and find that the stacked gate oxides have a lower gate oxide defect density. Lattice images have also been obtained for the Si/SiO2 interface using transmission electron microscopy (TEM). We find that stacked oxide synthesis results in lower stresses and asperities at the interface relative to thermal and rapid thermal oxidation.

scholarly journals The Effect of Nitrogen Concentration at Oxynitride Gate Insulators Formed by 28N2 + Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

2004 ◽  
Vol 1 (2) ◽  
pp. 41-47
Author(s):  
A. G. Felício ◽  
José Alexandre Diniz ◽  
J. Godoy Fo. ◽  
I. Doi ◽  
M. A. A. Pudenzi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Concentration ◽  
Oxide Thickness ◽  
Silicon Oxynitride ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Gate Insulators ◽  
Rapid Thermal Oxidation ◽  
Nitrogen Ion

Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electrical characteristics, such as field effect mobility between 390 cm2/Vs and 530 cm2/Vs, and sub-threshold slope between 70 mV/decade and 150 mV/decade, were obtained. MOS capacitors were used to obtain capacitance-voltage (C-V) and current-voltage (I-V) measurements. The Equivalent Oxide Thickness (EOT) of the films were obtained from C-V curves, resulting in values between 2.9 nm and 12 nm. SiOxNy gate insulators with EOT between 2.9 nm and 4.3 nm have presented gate leakage current densities between 3 mA/cm2 and 50 nA/cm2. The electrical characteristics were compared and correlated with the nitrogen concentration profiles at SiOxNy/Si of the structures, obtained by Secondary Ion Mass Spectrometry (SIMS).

Rapid Thermal Oxidation of Heavily Doped Silicon for Advanced Solar Cell Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thermal Oxidation ◽  
High Surface ◽  
Surface Concentration ◽  
Mos Capacitors ◽  
Cell Processing ◽  
Rapid Thermal Oxidation ◽  
Rapid Thermal Diffusion ◽  
Conversion Efficiencies

AbstractCrucial steps in solar cell processing such as emitter diffusion and surface oxide passivation have been carried out by rapid thermal processing (RTP). Rapid thermal diffusion (RTD) of boron into silicon from APCVD borosilicates has been studied. Rapid thermal oxidation (RTO) of the heavily B-doped surfaces of these shallow junctions (0.2 μm) has been studied in view of applicability of this technique in solar cell processing. These shallow diffusions have excellent lateral uniformity over large areas and have high surface concentrations depending on the APCVD deposition conditions and on RTP conditions. The surface passivating oxides resulting from the RTO are exceptionally thick in case of heavy boron diffused surfaces. RTO does not cause considerable drive-in of the diffused junction profiles. In the contrary, the thick RTO oxides considerably reduce the surface concentration, thereby reducing the heavy doping effects in the junctions, making them more suitable emitters for devices such as solar cells. p+nn+ solar cells have been fabricated on n-type CZ silicon wafers by RTD of boron followed by RTO. The cells result in conversion efficiencies as high as 16.2% The passivation effect of RTO oxides have been investigated by analysing RTO MOS capacitors and are compared to conventional furnace oxides.

Radiation Response of Thin Oxides Grown By Rapid Thermal Oxidation and Rapid Thermal Annealing Techniques

1987 ◽  
Vol 105 ◽  
Author(s):  
W. K. Schubert ◽  
C. H. Seager
Keyword(s):  
Thermal Oxidation ◽  
High Frequency ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Mos Capacitors ◽  
Rapid Thermal Oxidation ◽  
Hole Trapping ◽  
Radiation Induced ◽  
State Creation

AbstractHigh quality, 20 to 30 nm thick SiO2 films were grown using rapid thermal oxidation techniques. Metal-oxide-semiconductor (MOS) capacitors formed with these oxides were characterized electrically using low and high frequency capacitance measurements. The effects of post oxidation annealing (POA) ambient, temperature and duration on the initial oxide properties and the radiation response of the MOS capacitors were determined. The addition of a small amount of O2 to the POA ambient significantly reduced the radiation induced hole trapping and interface state creation, particularly for the higher POA temperatures. In addition, annealing and reirradiation experiments were carried out and showed that both the trapped charge and interface state buildup were completely reversible after anneals at 400°C. This repeatability argues against interface state creation models which involve irreversible changes in the atomic arrangements near the interface.

scholarly journals Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Youngseok Lee ◽  
Woongkyo Oh ◽  
Vinh Ai Dao ◽  
Shahzada Qamar Hussain ◽  
Junsin Yi
Keyword(s):  
Solar Cell ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Lifetime ◽  
Silicon Oxide Layer ◽  
Rapid Thermal Oxidation ◽  
Recombination Velocity

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get highVocby lowering the leakage current (I0) which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2) layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i) layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2thickness.

Influence of HCL on Rapid Thermal Oxides

1996 ◽  
Vol 429 ◽  
Author(s):  
G. A. Hames ◽  
S. E. Beck ◽  
A. G. Gilicinski ◽  
W. K. Henson ◽  
J. J. Wortman
Keyword(s):  
Thermal Oxidation ◽  
Gate Oxide ◽  
Surface Roughening ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Force Microscopy ◽  
Rapid Thermal Oxidation ◽  
Atomic Force ◽  
Secondary Ion

AbstractThe influence of HCl on the quality of gate oxides grown by rapid thermal oxidation has been investigated. HCl was added to oxidation ambient for some rapid thermal oxides while for others the silicon surface was annealed in a partial HCl ambient prior to rapid thermal oxidation. Improvements in gate oxide integrity were monitored on MOS capacitors and MOSFET devices by I-V and C-V testing. The levels of chlorine incorporated in the oxide from the addition of HCl to the process was measured by secondary ion mass spectroscopy. Atomic force microscopy was performed to measure surface roughening during HCl pre-oxidation treatments.

Sign in / Sign up

Export Citation Format

Share Document