Electrical characterization of PMMA:TiO2 gate dielectric for metal-insulator-semiconductor devices

2013 ◽  
Author(s):  
L. N. Ismail ◽  
M. N. A. Sauqi ◽  
Z. Habibah ◽  
S. H. Herman ◽  
M. N. Asiah ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Semiconductor Devices ◽  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical characterization of metal–insulator–semiconductor capacitors with xerogel as dielectric

2002 ◽  
Vol 80 (10) ◽  
pp. 1800-1802 ◽  
Author(s):  
E. Anulekha Manjari ◽  
A. Subrahmanyam ◽  
N. DasGupta ◽  
A. DasGupta
Keyword(s):  
Electrical Characterization ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

1997 ◽  
Vol 310 (1-2) ◽  
pp. 1-7 ◽  
Author(s):  
H. Hbib ◽  
O. Bonnaud ◽  
M. Gauneau ◽  
L. Hamedi ◽  
R. Marchand ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Gate Insulators
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