Silicon-carbide Schottky diodes with sputtered and laser-ablated thin-Pt gate as NO gas sensors in high temperature

2004 ◽  
Author(s):  
S.A. Khan ◽  
Gao Wei ◽  
E.A. de Vasconcelos ◽  
H. Uchida ◽  
T. Katsube
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Gas Sensors ◽  
Schottky Diodes

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

Current status of silicon carbide based high-temperature gas sensors

1999 ◽  
Vol 46 (3) ◽  
pp. 561-566 ◽  
Author(s):  
A. Lloyd ◽  
P. Tobias ◽  
A. Baranzahi ◽  
P. Martensson ◽  
I. Lundstrom
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Gas Sensors ◽  
Current Status ◽  
High Temperature Gas

High-Temperature SiC MOSFET Gas Sensors

2004 ◽  
Vol 828 ◽  
Author(s):  
Kevin Matocha ◽  
Vinayak Tilak ◽  
Peter Sandvik ◽  
Jesse Tucker
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Silicon Dioxide ◽  
Gas Sensors ◽  
Gate Dielectric ◽  
Low Cost ◽  
Metal Gate ◽  
Catalytic Metal ◽  
Combustion Exhaust

ABSTRACTDue to tightening restrictions on combustion exhaust emissions, low-cost sensors are desired for monitoring NOx production in high-temperature exhaust streams. This paper reports the characterization of Silicon Carbide MOSFET NO sensors for use in combustion exhaust monitoring. SiC depletion-mode MOSFETs were fabricated using a thermally-grown silicon dioxide gate dielectric and a Pt catalytic metal gate electrode. SiC MOSFET gas sensors were characterized at temperatures as high as 525°C in an ambient of synthetic air and NO (50–200 ppm) for 30 hours with no degradation.

scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Device processing and characterisation of high temperature silicon carbide Schottky diodes

2006 ◽  
Vol 83 (1) ◽  
pp. 150-154 ◽  
Author(s):  
K.V. Vassilevski ◽  
I.P. Nikitina ◽  
N.G. Wright ◽  
A.B. Horsfall ◽  
A.G. O’Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Schottky Diodes ◽  
Device Processing
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