scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

2007 ◽  
Vol 556-557 ◽  
pp. 865-868
Author(s):  
Gheorghe Brezeanu ◽  
M. Brezeanu ◽  
F. Udrea ◽  
G. Amaratunga ◽  
C. Boianceanu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Plate Technique ◽  
First Time

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

2021 ◽  
Vol 21 (3) ◽  
pp. 2001-2004
Author(s):  
Seong-Ji Min ◽  
Michael A. Schweitz ◽  
Ngoc Thi Nguyen ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Thermal Sensitivity ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Saturation Current ◽  
Pin Diodes ◽  
Temperature Range ◽  
Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs

2009 ◽  
Vol 615-617 ◽  
pp. 731-734
Author(s):  
Rudolf Elpelt ◽  
Peter Friedrichs ◽  
J. Hippeli ◽  
Reinhold Schörner ◽  
Michael Treu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Thermal Model ◽  
Schottky Barrier Diodes ◽  
Device Structure ◽  
Spice Model ◽  
Operating Temperatures

After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

2007 ◽  
pp. 873-876 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
I. Nikitina ◽  
A.B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Schottky Diodes

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

Sign in / Sign up

Export Citation Format

Share Document